Allicdata Part #: | KSB1015YTU-ND |
Manufacturer Part#: |
KSB1015YTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 3A TO-220F |
More Detail: | Bipolar (BJT) Transistor PNP 60V 3A 9MHz 25W Throu... |
DataSheet: | KSB1015YTU Datasheet/PDF |
Quantity: | 1957 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 5V |
Power - Max: | 25W |
Frequency - Transition: | 9MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Base Part Number: | KSB1015 |
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KSB1015YTU bipolar junction transistors (BJT) are widely used in industry. They are single stage devices that can be used as amplifiers, switches and voltage regulators, as well as linear power switching and phase control. KSB1015YTU BJTs can be used in a wide range of electronic circuits, including audio amplifiers, power supplies, LED drivers and many more.
The KSB1015YTU is a NPN silicon BJT with an Operating Voltage of 25V and a Collector-Emitter Voltage of 70V. It exhibits excellent high frequency response, good thermal stability and low noise performance. The KSB1015YTU is an excellent choice for high performance audio applications, as well as applications where reliability and low-noise are critical.
KSB1015YTU BJTs can operate in two different regions, the active region and the saturation region. In the active region, the transistor is in a highly linear mode, meaning that small current and voltage changes are linear and predictable. The transistor can also be used for fast switching and power amplification. As the transistor approaches saturation, current and voltage levels remain fairly constant, making it ideal for low-power, low-voltage switching applications.
KSB1015YTU has several different packaging versions available, including the standard TO-126 package with a collector-emitter breakdown voltage of 70V and an operating temperature range of -55 to +150°C. The TO-126 package also features a banded base for improved thermal conductivity, thus enabling higher power switching applications. KSB1015YTU can also be found in the TO-220 transistor mounting package.
The working principle of a KSB1015YTU BJT is based on the behavior of electrons. Electrons move from the emitter to the collector when a voltage is applied to the base, creating a current flow. The transistor amplifies the current and will allow a small current on the base to control a larger current. This current amplification allows low-power signals to control high-power signals.
KSB1015YTU BJTs can be used in a variety of circuits, from simple applications such as amplifiers and switches, to more complex power switching and voltage regulation. One of the most common uses for the KSB1015YTU is as a switch in high power applications, controlling the flow of larger currents with minimal power loss. The KSB1015YTU can also be used for linear applications such as audio amplifiers and voltage regulators, where high signal quality and low noise performance are critical.
In conclusion, KSB1015YTU is a versatile single stage NPN BJT that can be used for a variety of applications. It exhibits excellent high frequency response, good thermal stability, and can be found in various packaging types. For more demanding applications, the KSB1015YTU provides excellent performance and reliable switching capability, making it a dependable choice for audio and high power switching applications.
The specific data is subject to PDF, and the above content is for reference
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