
Allicdata Part #: | KSB1116GTA-ND |
Manufacturer Part#: |
KSB1116GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 1A 120MHz 750mW T... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 750mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSB1116 |
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KSB1116GTA Application Field and Working Principle
Transistors - Bipolar (BJT) - Single
The KSB1116GTA is a high-performance NPN silicon transistor specifically designed for use in automotive and other high temperature applications in which superior performance is required. It features excellent hFE characteristics with varying temperatures, a large current gain and a wide safe operating area. The KSB1116GTA is also an ideal solution for power switching and amplifier applications due to its combination of high performance and easy to use packaging.
The KSB1116GTA is a single-base NPN transistor and comes in an SC-88 package with a maximum collector current rating of 1.5 amps and a maximum collector-emitter voltage of 600 volts. It is manufactured using the SOT-23 packaging process, which enables it to achieve high performance and low power losses. The KSB1116GTA is designed to operate at a junction temperature of -55°C to +150°C and has an operating temperature range of -40°C to +125°C.
The KSB1116GTA\'s application field includes power amplifiers, power switching, battery protection circuitry, automotive applications, and other temperature-sensitive designs. Its primary working principle involves the transfer of current between the emitter and collector regions by controlling the base current input. When a voltage is applied to the base of the transistor, a base current is generated and this current is used to control the amount of current (the collector current) that passes through the device.
The KSB1116GTA has a very high power dissipation, which gives it excellent performance in applications where high quantities of current are driven. This high power dissipation also results in the device being able to operate at higher speeds, allowing for higher performance overall. The KSB1116GTA also benefits from its excellent hFE characteristics, which provide excellent linearity and frequency response.
Another benefit of the KSB1116GTA is its cost-effectiveness. As the device is manufactured using the SOT-23 package, the number of components required for an application is reduced, resulting in lower component costs and manufacturing costs overall. The device also benefits from its wide operating temperature range and reliable performance.
The KSB1116GTA is a versatile device, which is suitable for a range of applications and offers excellent performance, reliability and cost-effectiveness. It is capable of operating at a wide range of temperatures and can be used in a variety of power amplifier and power switching applications. Its excellent hFE characteristics and high power dissipation make it an ideal solution for automotive, battery protection and other high-temperature designs.
The specific data is subject to PDF, and the above content is for reference
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