KSB1151YSTSSTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 200mA, 2A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 2A, 1V
Power - Max:	1.3W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3
Base Part Number:	KSB1151

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KSB1151YSTSSTU Application and Working Principle

The KSB1151YSTSSTU is classified as a single bipolar junction transistor (BJT). This type of transistor is a three terminal devices using a single layer of crystalline silicon and can be used as amplifiers and switching devices. The KSB1151YSTSSTU is a PNP transistor, meaning it is composed of a negatively doped N-type semiconductor layer sandwiching a positively doped P-type semiconductor layer. Its application and working principle is described below.

KSB1151YSTSSTU Application

The KSB1151YSTSSTU has a wide range of applications, ranging from amplifier circuits to power supply and motor control circuits, and are often used in anything from audio and automotive applications to switching circuits.When used as an amplifier, the KSB1151YSTSSTU is capable of increasing both the power and voltage of the input signal. This is done by directing the current through the transistor\'s three terminals, known as the emitter, base, and collector. The base terminal is used to control the current that flows through the transistor, while the emitter and collector terminals allow the current to flow in and out of the transistor.In power supply and motor control circuits, the KSB1151YSTSSTU can be used as an on-off switch. When the transistor is switched on, the current can flow through it and power the circuit. Conversely, when the transistor is switched off, the current is prevented from flowing through the circuit.

KSB1151YSTSSTU Working Principle

The base of the KSB1151YSTSSTU is connected to the most positive point in the circuit. A small current is then allowed to pass from the base to the emitter terminal by means of the base-emitter junction. The flow of this current causes a larger current to flow from the collector to the emitter, thereby amplifying the current that passes through the transistor.The amount of current that is allowed to pass through the transistor is controlled by a voltage level that is applied to its base terminal. When the voltage is increased, the base-emitter junction acts like a closed switch and allows more current to flow from base to emitter. This causes an increase in the current flowing through the collector to the emitter, amplifying the current.Conversely, when the voltage is decreased, the base-emitter junction acts like an open switch. This prevents the base current from passing through, which reduces the amount of current flowing through the transistor, decreasing the amplification effect.

Conclusion

In conclusion, the KSB1151YSTSSTU is a single bipolar junction transistor that can be used for a variety of applications, ranging from amplifier circuits to switching devices. It works by allowing a small current to pass through its base-emitter junction, which causes a larger current to pass through the collector to the emitter, amplifying the original current. The amount of current allowed to pass through the transistor is determined by the voltage applied to its base terminal.

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