KSB1017YTU Allicdata Electronics
Allicdata Part #:

KSB1017YTU-ND

Manufacturer Part#:

KSB1017YTU

Price: $ 0.63
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 4A TO-220F
More Detail: Bipolar (BJT) Transistor PNP 80V 4A 9MHz 25W Throu...
DataSheet: KSB1017YTU datasheetKSB1017YTU Datasheet/PDF
Quantity: 74
1 +: $ 0.63000
10 +: $ 0.61110
100 +: $ 0.59850
1000 +: $ 0.58590
10000 +: $ 0.56700
Stock 74Can Ship Immediately
$ 0.63
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Power - Max: 25W
Frequency - Transition: 9MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

KSB1017YTU is a type of single bi-polar transistor known for its high reliability. It features low-noise, cost-effective, and low-power characteristics. It also offers great electrical performance and reliability. KSB1017YTU is usually used in a variety of electronic equipment and devices including amplifiers, speakers, microcontrollers, and digital signal processors.

The KSB1017YTU consists of three layers: emitter, base and collector, hence the term bi-polar. The emitter is the most important layer as it “emits” electrons, while the base and collector layers control the flow of the electrons.

In order for the transistor to function, two electrical signals are needed, one applied to the base and another to the collector. These two signals interact with each other, thus changing the characteristics of the transistor and its performance.

In the application field, the KSB1017YTU can be used for various amplifying purposes and due to its high gainer efficiency can amplify signals extremely fast. Additionally, KSB1017YTU can be used in power amplifiers, transistor-transistor logic, radio frequency amplifiers, switching circuits, and numerous signal processor applications.

In terms of working principle, the KSB1017YTU functions very differently than other transistors. The KSB1017YTU works by interaction between electrons and holes. Electrons will leave the emitter to the base and because the base is a P-type material, it will attract the electrons but only if it is positive. However, since the collector is a N-type material, it will repel the electrons, thus producing the amplified signal.

Thus, this single bipolar transistor is a great choice for amplifying applications due to its low noise, low power consumption, and cost-effective advantages. The KSB1017YTU can effectively amplify signals and can be used in a variety of electrical applications.

The specific data is subject to PDF, and the above content is for reference

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