KSB1121TTF Allicdata Electronics
Allicdata Part #:

KSB1121TTF-ND

Manufacturer Part#:

KSB1121TTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 2A SOT-89
More Detail: Bipolar (BJT) Transistor PNP 25V 2A 150MHz 1.3W Su...
DataSheet: KSB1121TTF datasheetKSB1121TTF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1.3W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Description

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KSB1121TTF is a type of bipolar junction transistor (BJT) which functions in single mode. It is divided into a total of three regions: collector region, base region, and emitter region. Made of silicon material, KSB1121TTF is often used for low-frequency and low-power applications. This type of transistor also provides superior isolation capacity and performs well at high temperatures and high frequencies.

The KSB1121TTF is based on a reliable and cost effective epoxy packaged transistor which has a maximum current gain of 45. It is specifically designed for low-noise linear applications especially where power dissipation and high-frequency performance are critical. Furthermore, the KSB1121TTF has a high-frequency gain up to 25 times of that of conventional transistors and low-noise values of -118 dBV/MHz and -154 dBV/MHz.

The basic operating principle of the KSB1121TTF is based on the flow of electric current through a silicon semiconductor. It features three legs; the emitter (E), the base (B), and the collector (C) which are connected across the electric circuit. KSB1121TTF is a current control device which operates when electric current flows through the collector region to the emitter region. When used in an electric circuit the three regions act as a switch to ON or OFF electric current.

The main function of the KSB1121TTF is to act as a power amplifier. It amplifies the input signal to the output signal. In addition, It is also used as a voltage regulator and switch in various circuits. It can be used for high frequency applications as it has a high frequency gain up to 25 times of that of conventional transistors, as well as in high power applications due to its excellent isolation capacity. The KSB1121TTF is also ideal for signal applications because it has low-noise values of -118 dBV/MHz and -154 dBV/MHz.

The KSB1121TTF is used widely in audio amplifier applications, such as loud speakers, headphones, and amplifier circuits. It is also widely used in radio frequency (RF) applications, such as power amplifiers, mixers and oscillators. In addition, it is also used for voltage regulators, voltage stabilizers, switching applications and transformers.

In summary, KSB1121TTF is a type of bipolar junction transistor (BJT) which functions in single mode. It has excellent isolation capacity, high-frequency performance, and low-noise values, thus making it ideal for low-frequency and low-power applications. Its main function is to act as a power amplifier and it is used widely in audio amplifier, RF, voltage regulators and other switching applications.

The specific data is subject to PDF, and the above content is for reference

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