
Allicdata Part #: | KSB1098RTU-ND |
Manufacturer Part#: |
KSB1098RTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 100V 5A TO-220F |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 5A ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 3mA, 3A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 3A, 2V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
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Transistors - Bipolar (BJT) - Single are used to amplify or switch electronic signals and electrical power. They are the fundamental building block of the modern integrated circuit and have been around since the late 1950s when they were primarily used within receptor, switch, transistor amplifiers, and computer & digital logic systems. KSB1098RTU is an example of such a type of single Bipolar Junction Transistor (BJT). It is designed primarily for use in applications such as remote controls and process control.
Overview of KSB1098RTU
KSB1098RTU is a single Bipolar Junction Transistor (BJT) device. It is manufactured in a plastic package with a ceramic base. The transistor has a gain bandwidth product of 8 MHz and a collector emitter breakdown voltage of 40 volts. The transistor has a total power dissipation of 600 mW and a maximum operating temperature of 80°C.
Application
The KSB1098RTU single Bipolar Junction Transistor (BJT) is designed to be used in applications that require high performance, low noise, and low power operation. It is an ideal choice for remote control, process control, frequency/pulse generators, audio/video amplifiers, switching regulators, and other high speed digital logic applications. The transistor is also suitable for applications that require high temperature and high pressure resistance, such as medical and industrial machinery.
Working Principle
The working principle of a Bipolar Junction Transistor (BJT) is based upon the ability of an electric current to control its own electrical contacts. A BJT consists of three layers of semiconductor material; the Base, the Collector, and the Emitter. A combination of these layers form a “P-N-P” structure (Positive semi-conductor-Negative semi-conductor-Positive semi-conductor). This arrangement allows current to flow between the base and the emitter with the current strength being controlled by the voltage applied to the base. When a small current is applied to the base, a large current is drawn from the emitter, providing amplification.
By varying the current through the base, the current through the emitter is varied, making the transistor suitable for applications such as remote controls, switching regulators and signal amplifiers. In addition, the transistor can also be employed to control the current among several components on a single circuit board, or to switch high power loads, such as motors.
Conclusion
Bipolar Junction Transistors (BJT) are used to amplify or switch electronic signals and electrical power. KSB1098RTU is an example of such a specific BJT device designed primarily for use in applications such as remote controls and process control. The transistor is characterized by its high performance, low noise, low power operation, and its ability to withstand extreme temperatures and high pressures. The working principle of KSB1098RTU is based upon the ability of an electric current to control its own electrical contacts and it is widely used to control current among components in a single circuit board or as a switch for higher power loads.
The specific data is subject to PDF, and the above content is for reference
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