KSB1366G Allicdata Electronics
Allicdata Part #:

KSB1366G-ND

Manufacturer Part#:

KSB1366G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 3A TO-220F
More Detail: Bipolar (BJT) Transistor PNP 60V 3A 9MHz 2W Throug...
DataSheet: KSB1366G datasheetKSB1366G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Power - Max: 2W
Frequency - Transition: 9MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Base Part Number: KSB1366
Description

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The KSB1366G is a single type bipolar junction transistor (BJT). It is a popular transistor made using monolithic integrated circuit process, which allows the component to be smaller and to operate more efficiently. This makes it ideal for use in a wide variety of applications, including radio frequency devices, discrete power circuits, and small signal amplifiers.

The KSB1366G is a NPN bipolar junction transistor. It has two base-emitter junctions and a collector-emitter junction. This type of transistor has two polarities, one for the collector-emitter junction and one for the base-emitter junction. This makes it capable of operating in a wide range of circuits, both analog and digital.

Working Principle of KSB1366G

The KSB1366G is a bipolar junction transistor that operates in the linear region. When a voltage is applied to the base of the transistor, the current from the collector flows to the emitter. This current is proportional to the voltage applied to the base and is controlled by the DC beta gain. The transistor gain increases linearly with applied current, allowing it to be used as an amplifier.

In digital circuits, the KSB1366G can be used as a switch. When the voltage applied to the base reaches a certain threshold, the transistor\'s collector current will increase dramatically and provide a low resistance path for current flow. This allows for the circuit to be easily switched on and off, making it ideal for use in logic circuits.

Application Fields of KSB1366G

The KSB1366G can be used in a variety of applications, including radio frequency (RF) circuits, discrete power circuits, and small-signal amplifiers. Its linear response and quick switching capability make it well suited for these applications.

The KSB1366G is especially well suited for use in RF circuits, as its linearity and stability allows it to accurately handle the high-frequency signals these circuits transfer. It is also often used in low-noise radio frequency amplifiers and impedance matching circuits.

In discrete power circuits, the KSB1366G can be used as a switch. Its fast switching time and high gain allow it to easily handle the high currents generated by these circuits. It can also be used in small-signal amplifiers, where its linear response allows it to accurately amplify low-power signals.

The KSB1366G is a versatile and powerful transistor that can be used in a variety of applications. Its small size and high performance make it a popular transistor for use in RF, discrete power, and small-signal circuits.

The specific data is subject to PDF, and the above content is for reference

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