KSB1149YS Allicdata Electronics
Allicdata Part #:

KSB1149YS-ND

Manufacturer Part#:

KSB1149YS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 100V 3A TO-126
More Detail: Bipolar (BJT) Transistor PNP - Darlington 100V 3A ...
DataSheet: KSB1149YS datasheetKSB1149YS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1.5A, 2V
Power - Max: 1.3W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Base Part Number: KSB1149
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The KSB1149YS are three-pin, single-packaged transistors that are designed for use in applications that require moderate power output and switching or amplification. They are designed for use with a wide range of signals, including digital- and analog-signal processing. The KSB1149YS are a family of transistors and have been designed to operate as either a NPN transistor, or a PNP transistor.

An NPN transistor is designed to conduct like a resistor, responding positively to a positive input signal. They are usually used for amplifying or switching applications. PNP transistors are designed to conduct like a diode, responding negatively to a positive input signal. They are commonly used for switching or amplifying applications.

The KSB1149YS transistors feature a collector-base breakdown voltage (BVcb) of 140V, and can withstand currents of 8A continuous and 12A peak. The base-emitter saturation voltage (Vbe) is typically 0.9V and the power dissipation is 0.8W max. The collector-emitter voltage (Vce) is typically 40V, and the collector-emitter saturation voltage (Vce(sat)) is 0.2V.

The KSB1149YS should be used with caution for applications in the following areas: automotive, automotive powertrain, and high-performance switching applications. When operating in these areas, it is important to use the correct operating temperature range and power rating.

The KSB1149YS transistors work on the principle of using an electrical current to control the flow of electrons. In the transistor, the current is always flowing in one direction, regardless of how the inputs are arranged. This means that when an input signal is applied to the base-emitter junction, the transistor will conduct current through the collector. This current is then used for amplifying or switching the signal applied.

In order to use the KSB1149YS transistors effectively, it is important to understand the characteristics of the device. The collector current is proportional to the base current, so the gain is determined by the ratio of the current flowing from the collector to the base. Additionally, the voltage drop from the base to the emitter is also important. It is typically 0.7V for the KSB1149YS, and if the input signal is below this voltage, then no current will flow. Finally, the frequency response of the transistor is determined by the capacitance associated with the junctions.

When using the KSB1149YS transistors, it is important to consider the various characteristics and requirements of the application. Additionally, attention must be given to the power rating and operating temperature range of the transistor, as incorrect operation can result in damage to the device. The KSB1149YS transistors are designed to provide reliable performance and can be used in a wide range of tasks, including those involving both switching and amplification.

The specific data is subject to PDF, and the above content is for reference

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