KSB1116AGTA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	750mW
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	KSB1116

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KSB1116AGTA Application Field and Working Principle

KSB1116AGTA is a high-performance bipolar junction transistor (BJT). It is part of the Transistors - Bipolar (BJT) - Single family and it is designed using advanced technologies. The device is manufactured using industry-leading CMOS process and features high voltage operation, high current operation, and low power consumption. KSB1116AGTA is suitable for use in a wide range of electronic applications, such as controlling power levels in cameras, clocking and data processing applications, audio amplifiers, motor control, low power amplifiers, home appliances, CPUs, and other general-purpose applications. KSB1116AGTA employs a high voltage, high current NPN structure, which maximizes performance and extends the operating temperature window. The structure also reduces the device’s power consumption. The device includes several devices, such as low voltage P-Channel MOSFET devices, high voltage N-Channel MOSFET devices, and P-Channel BJT devices. KSB1116AGTA comes with integrated protection circuitries, which offer protection from over voltages and over currents. It also provides protection from reverse bias voltages and allows the device to operate in a wide temperature range. KSB1116AGTA is qualified for underwriters\' laboratories (UL)1577 standard with a capability rated by the UL-rating cascade (ULC-rating method). UL-1577 standards are published to measure the performance of electronic components, and the ULC-rating method is used to certify the component and its performance. The working principle of KSB1116AGTA is based on the common-base circuit configuration. A common-base circuit is a three terminal device that is constructed from a base and two emitters. The base is the control terminal, and the two emitters are the input and output terminals. The common-base configuration allows the device to amplify a signal from the input terminal and route it through the output terminal. KSB1116AGTA utilizes a configuration known as double emitter follower. This configuration uses two NPN transistors in a cascade, each with its own collector terminal. The transistors act together to amplify the signal and provide isolation to protect the output terminals from electric shocks and other forms of interference. KSB1116AGTA is a superior device and offers low signal propagation delay, high gain, and low power consumption. The device also features an excellent insulation risk ratio, which ensures smooth and safe operation of the device. The integral protection circuitries provide maximum safety and protection for the device in case of voltage or current overloads. In conclusion, KSB1116AGTA is a superior device of the Transistors - Bipolar (BJT) - Single family and offers excellent performance, safety, and reliability. The device is suitable for a wide range of applications and provides low power consumption, high current and voltage operation, and an excellent insulation risk ratio. Integral protection circuitries provide maximum protection for the device and allow it to operate in an expanded temperature range.

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