KSB1022TU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	7A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	2V @ 14mA, 7A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 3A, 3V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F

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KSB1022TU is a dual high-gain power amplifier integrated chip (IC) produced by the integrated chip manufacturer, Shenzhen Keda Company.This IC chip is widely used in many fields, such as audio amplifiers, home audio amplifiers, professional sound amplifiers, and a variety of consumer electronics equipment. It can also be used in all kinds of multimedia, teaching, monitoring equipment and other systems. It is widely used due to its high performance and high efficiency.The transistor is the most widely used electronic component, which can be classified into two types: bipolar and field-effect transistors (FETs). KSB1022TU is a bipolar junction transistor (BJT) which belongs to the popular single NPN type, with a current gain of up to 1000. Its maximum power dissipation is 600mW, the maximum collector emitter voltage is 30 V, and the maximum DC collector current is 200mA.The working principle of the KSB1022TU transistor is based on the basic principle of electron motion. When a small current flows through the base terminal of the transistor, it is amplified by the current amplification effect, to form a larger current in the collector. At the same time, the electric charges injected by the base region and the collector region, can form a base-collector junction. The electric field generated by the collected charges, will attract electrons from the emitter and attract them to the collector. As a result, a large current flows through the collector side.The collector-emitter current also forms a voltage between the collector and the emitter, which is dependent on the current in the base terminal. This voltage can be adjusted by changing the base current to control the output current. This feature is used in the KSB1022TU transistor to control the output current of the device and to control the gain of the system.The main advantage of the KSB1022TU transistor is its high current gain, providing excellent performance in audio amplifiers. The transistor has a high power efficiency allowing for very low power consumption. It also has a wide operating temperature range, allowing for reliable operation even at high temperatures. The device also allows for a wide range of voltages to be used, providing compatibility with various applications.KSB1022TU transistors offer excellent performance in all kinds of applications, such as audio amplifiers, professional sound amplifiers, and other consumer electronics. It can also be used in all kinds of multimedia, teaching, monitoring equipment and other systems. The device is highly reliable and provides excellent performance and efficiency at a low cost. The KSB1022TU transistor can be used in a variety of applications, providing reliable performance and efficiency.

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