KSB1116ALTA Allicdata Electronics
Allicdata Part #:

KSB1116ALTA-ND

Manufacturer Part#:

KSB1116ALTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 60V 1A 120MHz 750mW T...
DataSheet: KSB1116ALTA datasheetKSB1116ALTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 750mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSB1116
Description

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The KSB1116ALTA is a type of single bipolar junction transistor, commonly known as a BJT. It is used in very specific applications and is most often used for the switching of digital signals and in specific kinds of logic operations. It is also commonly used in RF and high-gain amplifier circuits. The KSB1116ALTA is an enhancement mode device, meaning that it has the ability to switch signals without the need for an additional input current. This technology is often seen as more advantageous than depletion mode transistors, as it requires much less power than the latter.

The structure of a KSB1116ALTA is much like a traditional transistor, with three main terminals: the base, the collector, and the emitter. It is comprised of two active P-type semiconductors and one N-type semiconductor. When a positive potential is applied to the base, it causes electrons to be attracted to the emitter, creating a current. In turn, this current flows through the collector, reducing the voltage applied to it. This causes the device to act as a switch, allowing current or voltage to pass or be blocked depending on the voltage required.

The KSB1116ALTA can be used in a variety of ways. In digital logic circuits, the transistor is used as a logic gate. It is also commonly used in high-gain amplifier circuits for the amplification of small signals. In wireless technology, such as Bluetooth or infrared, the transistor is used to switch on and off the signal transmitters. This allows the signals to be kept with a minimal amount of power and reduces the chances of interference from other sources. Additionally, since the current can be switched on and off quickly, it is also used for applications like pulse power inverters, relays, vibration transducers, oscillators, and motor control circuits.

When looking at the design of a KSB1116ALTA, one of the most important considerations is the power dissipation. The power dissipated in the device should be kept to a minimum, as too much power can cause damage and reduced efficiency. Additionally, the voltage and current ratings of the device should be taken into account. A device that is rated too low will be unable to handle a large input, while a device that is rated too high will waste power and will be costly. The package in which the device is housed is also a consideration, as this will affect the temperature and the ability of heat to be dissipated effectively.

Overall, the KSB1116ALTA is a unique single bipolar junction transistor that has a variety of uses in digital logic, RF and high-gain amplifier circuits, and wireless technology. Its ability to switch signals without the need of an additional input current makes it a favored device in many applications. It is important to consider the power dissipation, voltage and current ratings, and package of the devices when looking at a KSB1116ALTA application.

The specific data is subject to PDF, and the above content is for reference

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