KSB1116AGBU Allicdata Electronics
Allicdata Part #:

KSB1116AGBU-ND

Manufacturer Part#:

KSB1116AGBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 60V 1A 120MHz 750mW T...
DataSheet: KSB1116AGBU datasheetKSB1116AGBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 750mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSB1116
Description

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KSB1116AGBU Application Field and Working Principle

KSB1116AGBU is a type of single Bipolar Junction Transistor (BJT) used in small electronic devices and circuits. This device has medium current gain, low voltage amplification and high voltage drop, making it suitable for small areas with low power usage. It is a very popular choice for applications such as amplifiers, audio circuits, RF receivers, DC motors, digital logic circuits and switching circuits.

The KSB1116AGBU is a low-noise type of BJT, which means it offers less noise in comparison to its predecessors. This is a key benefit for amplifiers and audio circuits, because it brings superior sound quality. It also provides high reliability, making it suitable for long-term applications where component values and electrical characteristics remain unchanged.

The structure of the KSB1116AGBU can be seen in Figure 1 below. As a single BJT, the transistor has three terminals: the collector, the base, and the emitter. The collector terminal acts as the input to the transistor, and the emitter terminal acts as the output. The base terminal is used to control the current flow between the collector and the emitter.

Figure 1 - KSB1116AGBU Structure
Figure 1 – KSB1116AGBU Structure

The working principle of the KSB1116AGBU is based on the idea of biasing. In BJTs, biasing is achieved by applying a voltage to the base terminal which causes a current to flow between the collector and the emitter. This current is controlled by the base voltage, and it is this current which provides the amplification or switching effects desired in electronic circuits.

Using the KSB1116AGBU in an electronic circuit requires the use of several external components. The two most important are a resistor and a capacitor. The resistor is used to limit the current flow between the collector and the emitter, and the capacitor is used to suppress noise. Other commonly used external components include diodes and transistors, which are used to provide a voltage source and protection from high-voltage spikes.

In summary, the KSB1116AGBU is a single Bipolar Junction Transistor which is suitable for small-area applications requiring low-noise and high-reliability. It is typically used in audio circuits and amplifiers, as well as other analog applications such as RF receivers and DC motors. It works by controlling the current flow between the collector and the emitter using the base voltage, which is modulated by external components such as resistors and capacitors.

The specific data is subject to PDF, and the above content is for reference

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