| Allicdata Part #: | KSB1151YSTSTU-ND |
| Manufacturer Part#: |
KSB1151YSTSTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 60V 5A TO-126 |
| More Detail: | Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through ... |
| DataSheet: |  KSB1151YSTSTU Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 2A, 1V |
| Power - Max: | 1.3W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | TO-126-3 |
| Base Part Number: | KSB1151 |
Description
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The KSB1151YSTSTU is a specialized transistor device. It is a single-transistor, bipolar junction type (BJT) device specifically designed for use in a variety of applications such as electronic switching and amplification. Its main features include high power gain and high current-driving capability.The KSB1151YSTSTU is a three-terminal device. It is designed with a collector terminal, an emitter terminal and a base terminal. The base terminal serves as the input, and the collector and emitter terminals are the output. The base terminal is typically used for DC biasing and the collector and emitter terminals are typically used for signal AC management.The KSB1151YSTSTU works by using electrons, which are small particles with a negative electrical charge, to create a transistor effect. When a voltage is applied to the input terminal, it causes a current to flow through the base and then through the collector-emitter region. This causes a switch action, or switching effect between the collector and emitter terminals. This effect allows the transistor to provide regulation or control of current flow and voltage output.The KSB1151YSTSTU has several advantages over other types of transistors. It offers very fast switching times and high current-driving capability. It also has excellent temperature stability and is able to maintain voltage regulation. In addition, the KSB1151YSTSTU has an extremely low switching threshold, meaning it can be used to accurately achieve a wide range of signal levels.The KSB1151YSTSTU is suitable for use in a variety of analog and digital applications, including amplifier and optical isolation circuits, as well as for supplying power for various devices. It is also commonly used in high-frequency switching systems, such as for computerized copiers.The KSB1151YSTSTU is also often seen in systems that require a precise level of regulation. This is due to its excellent current-driving capability in combination with its precise voltage regulation. This means it can be used to control a variety of precise settings, including micropower regulation, temperature control, and adaptive feedback systems.The KSB1151YSTSTU is also an ideal choice for applications that require low power and high-speed switching. Since it has an incredibly low threshold voltage and a very fast response time, it can be used to quickly switch power between two different circuits in order to save energy.In conclusion, the KSB1151YSTSTU is an advanced transistor that offers extremely high performance in a variety of applications. It has a low threshold voltage and is able to regulate both current and voltage in a precise manner. Furthermore, it also offers very fast switching times and excellent temperature stability. All of these features make it an ideal choice for both analog and digital applications.
The specific data is subject to PDF, and the above content is for reference
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