KSB1116LBU Allicdata Electronics
Allicdata Part #:

KSB1116LBU-ND

Manufacturer Part#:

KSB1116LBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 50V 1A 120MHz 750mW T...
DataSheet: KSB1116LBU datasheetKSB1116LBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 750mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSB1116
Description

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The KSB1116LBU is a type of single bipolar junction transistor (BJT). These transistors are semiconductors that use both positive and negative electrical charges to form a junction. They are most commonly used to amplify an electrical current, allowing circuits to switch and control large amounts of current with very small amounts of power. The KSB1116LBU is an example of a high-speed, low-noise bipolar junction transistor specifically designed for communication applications.

The KSB1116LBU consists of two diodes that are connected together in parallel with an extra “base” element. The base element controls the flow of current between the two diodes. When a current is applied to the base element, the junction produces a voltage gain, or amplification factor, that affects the flow of current. This makes the KSB1116LBU an excellent choice for circuits requiring high-speed switching and amplification of signals without producing significant amounts of noise.

The primary application field for the KSB1116LBU is communication. This transistor can be used as a driver for high-speed digital and analog signals, providing significant increases in speed and efficiency. It can also be used in line receivers and other RF communications applications, providing better signal quality and improved noise reduction over standard transistors. In addition, the KSB1116LBU can be used in many other types of electronic circuits, such as amplifiers, detectors, modulators, and switch drivers.

The KSB1116LBU transistor has a maximum gain of 200 and a maximum collector current of 250 mA. It is manufactured in a TO-92 package and has breakdown voltages of 50 volts. The transistor is capable of operating at high speeds and frequencies up to 1 GHz due to its low internal resistance and small capacitance. Additionally, this transistor has a minimum operating temperature of -55°C, making it suitable for cold weather environments.

The key features of the KSB1116LBU include low noise, higher gain, faster switching, and better current handling capability. Additionally, the transistor uses a low power supply and has a highftransmission rate for improved performance. With its small size and wide variety of applications, the KSB1116LBU is an ideal choice for any application requiring low-noise, high-performance transistors.

The specific data is subject to PDF, and the above content is for reference

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