KSB1151YSTU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 200mA, 2A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 2A, 1V
Power - Max:	1.3W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3
Base Part Number:	KSB1151

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KSB1151YSTU Overview

The KSB1151YSTU is a high performance NPN, single bipolar junction transistor (BJT) available on the market today. This device comes in a TO-220 package, is designed to operate at a maximum current of 0.6A, and is able to support a wide range of operating temperatures. The KSB1151YSTU is a robust transistor suitable for a variety of applications, ranging from low power amplifiers to high current switching. This versatile BJT is commonly found in audio amplifiers, switching circuits, and other low end applications.

KSB1151YSTU Application Field

The KSB1151YSTU is a versatile single bipolar junction transistor (BJT) designed for a wide range of applications. This device can be used as an amplifier in low power audio applications, as it can handle a maximum current of 0.6A. Its wide operating temperature range and high power dissipation make it suitable for use in with high power amplifiers and switching circuits.The KSB1151YSTU is also often used in current sensing and motor control applications, as its high current capacity and low saturation voltage make it ideal for controlling large amounts of current. Additionally, this BJT can also be used in linear voltage regulation, as its low voltage drop makes it suitable for providing a regulated output voltage.

KSB1151YSTU Working Principle

A bipolar junction transistor (BJT) is a semiconductor device composed of two P-N junctions. The KSB1151YSTU is a NPN type BJT, which means that the current is conducted through a combination of a P-type semiconductor and an N-type semiconductor. In a NPN BJT, the P-type semiconductor is the base and the N-type semiconductor is the emitter and collector. When a voltage is applied to the base of the transistor, a large current will flow between the emitter and the collector. The amount of current flowing between the emitter and collector can be controlled by adjusting the base voltage. This concept is known as current gain. The maximum current allowed to flow through the transistor is determined by the device’s rated current, which is typically 0.6A for the KSB1151YSTU. The amount of power that can be dissipated by the device is determined by its power dissipation rating, which is typically 50W for the KSB1151YSTU.

Conclusion

The KSB1151YSTU is a versatile, high performance single bipolar junction transistor (BJT) designed for a wide range of applications. This device can be used in a variety of applications, ranging from low power amplifiers to high current switching. It is also commonly found in current sensing and motor control applications due to its high current capacity and low saturation voltage. The KSB1151YSTU operates using a combination of a P-type semiconductor and an N-type semiconductor, with the amount of current flow through the device being controlled by adjusting the base voltage. The device can handle a maximum current of 0.6A, and has a power dissipation rating of 50W.

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