KSD1621TTF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 75mA, 1.5A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	500mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3
Base Part Number:	KSD1621

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KSD1621TTF Application Field and Working Principle

KSD1621TTF is a single-transistor bipolar (BJT) device. It is a high gain, small footprint NPN transistor which can be used in a wide range of applications. The device has been designed for use in applications ranging from low power circuits to high power switching and driving applications. KSD1621TTF is also ideal for use in consumer products, industrial and aerospace electronics, and automotive applications.

Overview

The KSD1621TTF is a single-transistor bipolar junction transistor (BJT) which is designed to be used in high voltage and current applications. The device is capable of switching up to 1200V, with a maximum power dissipation of 2.2W. The maximum collector-emitter voltage (Vce) is 800V, and the maximum collector current (IC) is 1.5A. The transistor is constructed using a silicon-based substrate, and features a collector-emitter voltage (Vce) of 800V, and a collector current rating (Ic) of 1.5A.The KSD1621TTF is a high-gain transistor which is particularly well-suited for use as an amplifier or switching element.

Working Principle

The KSD1621TTF is a single-transistor bipolar junction transistor (BJT). The device is composed of 3 semiconductor regions: the base, the collector and the emitter. The device has a common base configuration and works on the principle of minority carrier injection. The working principle of the KSD1621TTF can be understood by considering the operation of the diode formed between the base and the emitter of the transistor. When voltage is applied to the base-emitter junction, holes and electrons are injected from the base and the emitter, respectively. These minority carriers cross the base-collector junction and combine, creating a current flow between the collector and the emitter. When the base current is increased, the collector current increases as well, which is known as the "transistor action". The transistor action is the main reason why an NPN transistor such as the KSD1621TTF can act as an amplifier or a switching element. When the base current is increased, the collector current increases, resulting in a larger voltage swing on the collector-emitter terminals. This enables the transistor to act as an amplifier. When the base current is high enough, the collector current is also high enough to saturate the emitter-collector junction and cut off the voltage. This allows the transistor to be used as a switch.

Application Fields

KSD1621TTF is suitable for a wide variety of circuit applications and is ideal for use in consumer products, industrial and aerospace, and automotive electrical systems. It is well-suited for high voltage and current switching or driving applications, as the device is capable of switching up to 1,200V with a maximum power dissipation of 2.2W. The device is also a high-gain transistor and can be used for amplifier or switching circuits. The device is commonly used in power supplies, switching circuits, inverters, and various other applications.KSD1621TTF can also be used in audio power amplifier circuits, where it can provide high gains with low power dissipation. It is also used in time-delay circuits, wherein the gain of the transistor is employed to provide an adjustable time delay. The transistor can also be used in differential amplifier circuits, where its high gain and low power dissipation makes it ideal for wide power output range applications.

Conclusion

KSD1621TTF is a single-transistor bipolar junction transistor device capable of switching up to 1,200V with a maximum power dissipation of 2.2W. The device is suitable for a wide range of applications, including high voltage and current switching or driving, audio power amplifier circuits, time-delay circuits, differential amplifier circuits, and other applications. The device is also a high-gain transistor and can be used for amplifier or switching circuits.

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