MCH6124-TL-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	195mV @ 75mA, 1.5A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	1W
Frequency - Transition:	400MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	6-MCPH

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MCH6124-TL-E is a three-terminal, ultra-fast recovery transistor which is classified under the category of transistors - bipolar (BJT) - single. It is designed for high energy and data processing circuits, high speed switching applications and power amplifiers circuits. It is a high current device with high level of thermal and second breakdown protection. The MCH6124-TL-E contains a high speed switching device die, mounted in an 8-pin dual-flat no-leads (DFN) package. This device is capable of switching at speeds up to 4GHz. This device is also rated for low spread and low distortion. The device also offers improved performance than devices equipped with integrated thermal protection.The high-frequency output characteristics of MCH6124-TL-E are especially suitable for applications such as data processing circuits, high speed switching applications, power amplifiers circuits and other circuits where high gain and high output power are required.The working principle of MCH6124-TL-E involves the use of a transistor in order to switch current from one circuit node to another. The three terminals of the transistor are designated as the base, the collector, and the emitter. The base terminal applies a switching signal in order to switch the current from the collector to the emitter. The current flow can be controlled by adjusting the magnitude of the switching signal applied to the base terminal.To facilitate the required level of current conduction, the collector node has to be connected to a large external power supply and the emitter node is connected to ground or a reference voltage. The base terminal is then driven with the required signal, which in turn will cause the transistor to either conduct or cut off the current flowing through the collector node. When the base terminal receives a signal to turn “on” the transistor, the current starts flowing through the collector node and the emitter node and is collected by the power supply. This current flow is usually referred to as “gain current” and is mainly determined by the signal applied to the base terminal, the voltage of the power supply, and the design of the transistor itself.When the signal at the base terminal is switched “off”, the transistor cuts off the current flow and quench the current. The speed of the current quenching is determined by the so-called “switching speed” of the transistor. The switching speed of the MCH6124-TL-E is particularly high, allowing for high-speed switching applications. In addition, its high gain current, low switching speed and low spread also makes it suitable for high power applications.Overall, the MCH6124-TL-E is an ideal choice for a variety of applications that require high speed and high power, such as data processing circuit, high speed switching applications, and power amplifiers circuits. With its low spread and low distortion, it is a great device to use in these contexts. Furthermore, its high thermal and second breakdown rating protect it from potential damage, extending its deployed life and reliability.

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