MCH6660-TL-W Discrete Semiconductor Products |
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Allicdata Part #: | MCH6660-TL-WOSTR-ND |
Manufacturer Part#: |
MCH6660-TL-W |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V 2A/1.5A MCPH6 |
More Detail: | Mosfet Array N and P-Channel 20V 2A, 1.5A 800mW Su... |
DataSheet: | MCH6660-TL-W Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.10316 |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2A, 1.5A |
Rds On (Max) @ Id, Vgs: | 136 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 128pF @ 10V |
Power - Max: | 800mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | 6-MCPH |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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Transistors - FETs, MOSFETs - Arrays
The MCH6660-TL-W is a surface mount MOSFET array that incorporates 8 N-channel MOSFET transistors on one chip. The MCH6660-TL-W is designed to provide a space-saving and low-cost alternative to discrete power MOSFET assemblies. It is commonly used in applications such as solid state relays, DC-DC converters, and power switching circuits.
Features
- Very low on-resistance
- Low input capacitance
- Low gate charge
- Low input and output leakage current
- High peak drain current (20A) and drain-source breakdown voltage (200VDC)
- Multi-layer gate construction
- High dv/dt immunity
- Compatible with Pb-free and lead-based terminals
Structure
The MCH6660-TL-W is a monolithic IC that consists of 8 independent N-Channel power MOSFETs. Each MOSFET has its own independent gate terminal, drain terminal and source terminal. The MCH6660-TL-W has an internal multi-layer gate construction which gives it enhanced dv/dt immunity. This multi-layer gate structure also helps to reduce the input capacitance and simplify gate driving requirements.
Working Principle
The MCH6660-TL-W operates in a manner similar to that of other MOSFETs. An electrical signal (gate voltage) is applied to the gates of the MOSFETs. By changing the voltage level at the gates, current flow between the drain and source terminals can be controlled. When the voltage applied to the gates is low, the MOSFETs are off and no current will flow. When the voltage applied to the gates is high, the MOSFETs will turn on and current will flow between the source and drain terminals.
Applications
The MCH6660-TL-W is often used in circuits that require the on/off control of higher power, such as in the following applications:
- Regulated Power Supplies
- Adaptive Lighting Control
- Solid State Relays (SSRs)
- Solar Energy & Battery Management
- DC-DC Converter Control
- Power Switching Circuits
Due to its low on-resistance, low gate charge and high peak drain current, the MCH6660-TL-W is an attractive choice for the on/off control of higher power in these types of applications.
The specific data is subject to PDF, and the above content is for reference
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