MCH6336-TL-H Allicdata Electronics
Allicdata Part #:

MCH6336-TL-H-ND

Manufacturer Part#:

MCH6336-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 12V 5A MCPH6
More Detail: P-Channel 12V 5A (Ta) 1.5W (Ta) Surface Mount 6-MC...
DataSheet: MCH6336-TL-H datasheetMCH6336-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 6V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The MCH6336-TL-H is a type of insulated gate bipolar transistor (IGBT) that is used in many industrial and consumer applications. It is a very versatile device, suitable for multiple different tasks, and is commonly used in applications such as motor drive, solar inverters, and UPS systems. This article will discuss the application field and working principle of the MCH6336-TL-H.

The primary application field of the MCH6336-TL-H is in industrial and consumer applications that require high efficiency, durability, and low switching losses. This device is especially well-suited for applications that require reliable operation in high temperature environments, as it has an extended operating temperature range of -40 to +125ºC. Additionally, this IGBT has a wide application field that extends to consumer electronics, automotive, and medical equipment applications.

The working principle of the MCH6336-TL-H is based on the principles of high-frequency switching, where voltage and current carrying capabilities are maximized. This IGBT uses a three-terminal structure, composed of two main terminals (the main gate and the main emitter) and one auxiliary terminal (the auxiliary gate). When a voltage is applied to the main gate, electrons are able to flow through the primary channel as current, and this current is amplified by the auxiliary gate. This amplified current is then either dissipated as heat or pushed out of the main emitter. This principle forms the basis of the high-frequency circuit switching that is so important for high-efficiency applications.

The MCH6336-TL-H is an important device in the world of industrial and consumer electronics, as it is well-suited for applications that require high efficiency and low switching losses. Its extended operating temperature range means it can easily handle high temperatures common in industrial applications, and its three-terminal structure allows for reliable operation. Through the principle of high-frequency circuit switching, the MCH6336-TL-H is able to amplify current and deliver highly efficient results for a wide range of applications. Knowing the application field and working principle of this IGBT is essential for using it effectively and efficiently.

The specific data is subject to PDF, and the above content is for reference

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