MCH6421-TL-W

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MCH6421-TL-W is an N-Channel enhancement mode Field Effect Transistor (FET) which is manufactured by ON Semiconductor. These N-Channel MOSFETs are specifically designed for high-speed switching in high-performance, high efficiency power systems. They are ideal for both logic level and medium power applications.

This MOSFET is capable of operating over wide voltage range, up to 100V. With built-in protection features, it is highly reliable. The gate charge (Qg) is 17nC, and the drain to source on-state resistance (RDS) is 0.25 ohm. These features make the device the ideal choice for medium power applications.

The MCH6421-TL-W utilizes the lateral Field Effect Rectifying technology. The integrated dual n-channel enhancement mode power MOSFETs have been designed with lateral double diffused metallurgical bonded structure.

The integrated MOSFET structure includes two input FETs, which are combined with two output FETs having a common source (drain) contact and an internal pair of independent source/drain contacts. The output FETs are connected together in reverse conducting mode, thus allowing the double diffused junction of the FET to be realized by the single common source contact. This FET structure allows for a higher current flow than can be achieved using conventional FETs.

The MCH6421-TL-W is typically used in applications that require high-speed switching, such as motor control, power supply design and power conversion. Its low gate charge, low RDS and wide voltage range make it very suitable for high-efficiency power systems. In addition, its integrated protection features ensure reliable operation in all conditions.

The main working principle of MCH6421-TL-W lies in the fact that electrical charges flow through a semiconductor by the manipulation of the electric field applied to the channel, a process known as field effect rectifying. When a voltage is applied to the gate, it generates a vertical electric field in the channel, which causes a change in the charge carrier concentration in the channel. This in turn changes the conductivity of the channel, allowing current to flow through the semiconductor channel. This process can be used to switch on (and off) the flow of current through the channel.

In summary, MCH6421-TL-W is a N-Channel MOSFET specifically designed for high-speed switching application. Its lateral Field Effect Rectifying technology allows for a higher current flow than conventional FETs. Its low gate charge, low RDS and wide voltage range make it the ideal choice for medium power applications. Its integrated protection features also ensure reliable operation in all conditions.

The specific data is subject to PDF, and the above content is for reference