MCH6602-TL-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MCH6602-TL-E is an array of transistors (FETs - MOSFETs) that have many applications. It is made up of a number of transistors connected in series and uses a three gate technology to modulate electrical signals and switch current paths. This arrangement is similar to that used in monolithic array processors, but with several differences.

MCH6602-TL-E transistors are typically used in high voltage applications such as brushless motors or digital audio amplifiers due to their low on-resistance and high power dissipation. Additionally, this array of transistors can be used in motor control, power supply regulation, and other switching applications. In some applications, this array of transistors can also be used in low-frequency, complex analog signal control systems.

The basic working principle of MCH6602-TL-E is based on field-effect transistors (FETs). These transistors are composed of two gates, namely the source and the drain gates. The two gates are separated by a thin layer of insulation, in this case an oxide layer. This oxide layer works like a capacitor with the source and drain terminals providing the voltage supply for the gates.

In the MCH6602-TL-E, the source and the drain are connected in series in order to increase the range of its use. This allows the transistors to modulate signals across a wider range of frequencies and currents. In addition, higher voltage range is also possible due to the increased amount of output current. The MCH6602-TL-E also includes a dedicated gate-power supply that supplies the gate current with the necessary voltage.

The way the MCH6602-TL-E works is that it modulates the electrical signals by selectively switching the current between the source and the drain terminals. This modulation occurs when the voltage on the gate is greater than the threshold voltage (Vth). When the voltage on the gate is below the threshold voltage, the FET is off and current will not flow through the circuit. However, when the voltage on the gate exceeds the threshold voltage, it will cause the FET to turn on and will allow current to flow in the circuit.

In addition to modulating the electrical signals, the MCH6602-TL-E also provides protection against current over-flow and over-voltage. This protection is ensured by the P channel MOSFETs that are included in the array. This ensures that the MCH6602-TL-E will switch off in the event of over-current or over-voltage and prevent any further damage to the circuit.

In conclusion, MCH6602-TL-E is a sophisticated array of transistors that is used for a variety of applications. It operates on the principles of field-effect transistors and utilizes three gate technology to modulate electric signals and switch current paths. The P channel MOSFETs included in the array provide additional protection against over-current and over-voltage. This makes it an ideal choice for high voltage applications such as brushless motors and digital audio amplifiers.

The specific data is subject to PDF, and the above content is for reference