Allicdata Part #: | MCH6660-TL-H-ND |
Manufacturer Part#: |
MCH6660-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V 2A/1.5A MCPH6 |
More Detail: | Mosfet Array N and P-Channel 20V 2A, 1.5A 800mW Su... |
DataSheet: | MCH6660-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2A, 1.5A |
Rds On (Max) @ Id, Vgs: | 136 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 128pF @ 10V |
Power - Max: | 800mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | 6-MCPH |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MCH6660-TL-H is a power MOSFET array from MicroSemi, designed as a component in an electronic circuit with two through-hole terminals. It is comprised of two N-channel power MOSFETs that are connected in parallel to increase the handle current, thereby providing a higher handle voltage. This array provides excellent power handling capabilities and is suitable for linear, digital and analog circuits.
The MCH6660-TL-H is a dual power MOSFET array specifically designed to handle high current applications. It contains two high-side N-channel power MOSFETs in an industry standard surface-mount package. The component has a high breakdown voltage of up to 100V and a maximum current rating of 10A. The component can be used in various applications, such as power supplies, motor control, and automotive applications.
The device features an intrinsic body diode cloaking design, which helps to reduce power dissipation and minimize voltage drops. It also features integral substrate diodes to help minimize switching losses in high frequency applications. In addition, the included circuit protection and amperometric over current shutdown capabilities provide exceptional reliability for applications in high-power switching. Furthermore, the included ESD protection features make it suitable for applications in harsh or energetic environments.
The working principle of the MCH6660-TL-H power MOSFET array is quite simple. Essentially, it works by utilizing two transistorized devices, which are connected in series, in order to switch high current power efficiently. Each of the two transistors is connected to two terminals, one of which is the source and the other the drain. When voltage is applied to the source, it causes current to flow through the device, which then transfers the current to the drain. During this process, the two MOSFETs provide amplification, allowing the device to handle higher current loads than would typically be possible.
The MCH6660-TL-H is ideal for a variety of applications, including power supplies, motor control, and automotive applications. It can also be used in other applications requiring high current loads, such as industrial machinery and electronic, telecommunications, and medical equipment. In addition, the device is also suitable for other applications in which die embedding technology is necessary, as it is compliant with the standard SOT-273-3JE package.
Overall, the MCH6660-TL-H is a proven and reliable dual power MOSFET array that is suitable for a wide range of applications. By utilizing its high power handling capabilities, it provides an efficient way to switch high current power, making it an ideal choice for a variety of applications including motor control, power supplies, and automotive systems.
The specific data is subject to PDF, and the above content is for reference
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