MCH6605-TL-EX Allicdata Electronics
Allicdata Part #:

MCH6605-TL-EX-ND

Manufacturer Part#:

MCH6605-TL-EX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: INTEGRATED CIRCUIT
More Detail: Mosfet Array
DataSheet: MCH6605-TL-EX datasheetMCH6605-TL-EX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
FET Type: --
FET Feature: --
Drain to Source Voltage (Vdss): --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: --
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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The MCH6605-TL-EX is a monolithically integrated dual N-channel transistor array that uses field-effect transistor (FET) technology. The device is manufactured using an advanced complementary symmetry FET process to realise a low on resistance. The MCH6605-TL-EX is ideal for use in low voltage switching applications, such as in digital logic circuits and complex interface systems, where high demands are placed on performance. The device is available in a range of package styles including the dual-in-line, the quad-flat pack, and the power-inverted package.

The MCH6605-TL-EX is a dual transistor array that consists of two N channel FETs. A drive signal is used to control the gates of the two transistors. When the signal is low, the FETs turn off, and when the signal is high, the FETs turn on. The FETs are connected in such a way that they exhibit symmetrical switching characteristics, which make it easier to design circuits using these devices. In addition, the two FETs can be operated in either parallel or series configurations, depending on the application.

The function of the MCH6605-TL-EX is to provide an interface between components that operate on different voltage levels. The device can also be used for signal conditioning, pulse width modulation (PWM) and signal buffering. Furthermore, the device offers protection from overvoltage, ESD and current surge. It is also suitable for producing a delayed output signal.

The MCH6605-TL-EX is a highly integrated device that can be used to reduce component count and save board space in the application when compared to discrete components. The device is rated for operating temperature range of -40°C to +125°C and can handle maximum drain source voltages of -40V. Furthermore, the device offers minimum RDS on values of 11mΩ and a low gate threshold voltage of 3-4V.

The working principle of the MCH6605-TL-EX is simple. When a gate drive signal is applied, it causes a current to flow through the FETs which induces a voltage drop across its Drain-Source terminals. This voltage drop is the voltage which controls the FETs and provides a signal to the load. The FETs must stay in this on-state as long as the gate drive signal is applied. When the gate signal is removed, the FETs switch off and the device returns to its off state.

The MCH6605-TL-EX is a versatile device that can be used in a wide range of applications, from digital logic to high speed applications. The device has proven to be a reliable and popular choice for engineers due to its excellent performance, low power consumption, and small size. This makes it an ideal choice for all types of low voltage applications, from digital interfaces to power management.

The specific data is subject to PDF, and the above content is for reference

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