Allicdata Part #: | MCH6336-TL-W-ND |
Manufacturer Part#: |
MCH6336-TL-W |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 5A MCPH6 |
More Detail: | P-Channel 12V 5A (Ta) 1.5W (Ta) Surface Mount SC-8... |
DataSheet: | MCH6336-TL-W Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10781 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.9nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-88FL/MCPH6 |
Package / Case: | 6-SMD, Flat Leads |
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Introduction
MCH6336-TL-W is a Dual N-Channel Capacitorless High Voltage Mosfet (HV-MOSFET). This MOSFET is designed to offer a high blocking voltage and a low gate capacitance with a dense pinout for high density applications. This device is suitable for many applications such as solar cell drives, industrial, automotive and consumer applications
Application Field
MCH6336-TL-W is specifically tailored for use in high voltage, high-efficiency switching applications. Its low gate capacitance and high voltage blocking combine to reduce the power losses associated with circuit capacitance. The high-level blocking of MCH6336-TL-W helps make it a viable solution for high-efficiency, power-regulated circuits.
In addition, it is suitable in applications including small motor drive, high voltage switching, home appliance, automotive and consumer electronics. Its robust design makes it suitable for small, cost-sensitive applications such as fan controllers and other home automation systems.
Due to its low gate capacitance and high voltage blocking, MCH6336-TL-W is well-suited for automotive applications such as powertrain control, airbag deployment, and fuel injection control. The rugged design and inherent reliability of the device make it an ideal solution for automotive use.
Working Principle
MCH6336-TL-W is a dual N-Channel HV-MOSFET with two independent drains, a single gate, and a high breakdown voltage rating. This device works by changing the amount of current allowed to pass through the MOSFET in response to an applied voltage on the gate terminal. This change in current flow is due to the depletion region that forms in the device when a voltage is applied, which increases the resistance to current flow by creating a barrier.
One of the key features of this device is its low gate capacitance, which helps reduce the amount of power that is wasted in the circuit due to charging and discharging of the gate terminal. As an added benefit, the low gate capacitance helps reduce the stress on the gate driver circuit, which helps improve system reliability.
In addition, this device is designed for high-efficiency switching applications, and the voltage blocking capabilities of MCH6336-TL-W help reduce power losses due to capacitance charges. This helps to improve current conduction and reduce thermal losses, improving the overall system efficiency.
Conclusion
MCH6336-TL-W is a Dual N-Channel Capacitorless High Voltage Mosfet (HV-MOSFET) with a low gate capacitance and robust design for high voltage, high-efficiency switching applications. This device is well-suited for powertrain control, airbag deployment, and fuel injection control in automotive applications, as well as consumer electronics, home appliances and small motor drive. Its low gate capacitance helps reduce the amount of power that is wasted in the circuit due to charging and discharging of the gate terminal, while its high voltage blocking capabilities reduce power losses due to capacitance charges, helping to increase current conduction and reduce thermal losses.
The specific data is subject to PDF, and the above content is for reference
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