MCH6604-TL-E Allicdata Electronics
Allicdata Part #:

MCH6604-TL-E-ND

Manufacturer Part#:

MCH6604-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 50V 0.25A MCPH6
More Detail: Mosfet Array 2 N-Channel (Dual) 50V 250mA 800mW Su...
DataSheet: MCH6604-TL-E datasheetMCH6604-TL-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH
Description

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MCH6604-TL-E is a quad N-channel MOSFET array. This device has four independent N-channel MOSFETs controlled by a single gate signal and is suitable for applications where multiple low-side MOSFETs need to be controlled simultaneously. These arrays have low RDS(ON) for improved power efficiency, low threshold voltage and a reduced on-state resistance for improved thermal performance.

The MCH6604-TL-E array offers improved switching performance over single MOSFETs and is recommended for applications where multiple low-side MOSFETs need to be controlled simultaneously. This device is specially designed for applications such as motor speed control, power management in laptop/mobile systems, DC/DC conversion, and inverter applications. Additionally, this device can be used in hot-swap applications.

The operating principle of the MCH6604-TL-E is similar to a single MOSFET. It has four independently controlled N-channel MOSFETs arranged in a single package. The drain of each MOSFET is connected to the source of the other. This device can be switched on and off by applying a voltage to the gate of the MOSFET. The threshold voltage for this device is 5V and the maximum drain-source voltage is 40V. Additionally, the maximum junction temperature for this device is 150°C.

This device offers several benefits over conventional MOSFETs. It is highly efficient and its low on-resistance enables it to save power. Additionally, its single gate voltage control makes it suitable for applications where multiple MOSFETs need to be controlled. It also offers good thermal performance and improved switching performance, which is important in many applications. It is also easy to use, with a single pin controlling all four of the device\'s MOSFETs.

The MCH6604-TL-E is an excellent choice for applications such as motor speed control, power management in laptop/mobile systems, DC/DC conversion, and inverter applications. Additionally, this device can be used in hot-swap applications. It is highly efficient, offers low on-resistance, single gate voltage control, good thermal performance and improved switching performance. Overall, the MCH6604-TL-E is an excellent choice for applications which require multiple low-side MOSFETs to be simultaneously controlled.

The specific data is subject to PDF, and the above content is for reference

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