Allicdata Part #: | MJE15028OS-ND |
Manufacturer Part#: |
MJE15028 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 120V 8A TO220AB |
More Detail: | Bipolar (BJT) Transistor NPN 120V 8A 30MHz 50W Thr... |
DataSheet: | MJE15028 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 2V |
Power - Max: | 50W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The MJE15028 is a single-stage in-line NPN Bipolar Junction Transistor (BJT) designed for use in power switching applications. It has a maximum voltage rating of 95 V and utilizes an oxide-nitride-oxide (ONO) structure for improved power handling capabilities. The MJE15028 is commonly used in motor control applications and certain automotive applications.
The MJE15028 has a simple two-terminal configuration that consists of a collector, emitter, and base. When a voltage is applied to the base-emitter junction, it causes the transistor to become active, forwarding the current from the collector to the emitter. This process is typically referred to as forward-biasing and is used to amplify the input signal. The current flowing through the MJE15028 is known as the collector current and is typically in the range of several milliamperes.
To improve the power handling capability of the device, the MJE15028 utilizes an oxide-nitride-oxide (ONO) structure. This structure is formed when silicon dioxide (SiO2) and silicon nitride (Si3N4) are employed as the dielectric layers of the device structure. The two layers form an electrical insulator with a high dielectric strength that is superior to a single layer of SiO2. This enables the MJE15028 to handle higher voltages and greater power dissipation than other types of transistors.
One of the most common applications for the MJE15028 is in motor control applications. The device is capable of controlling motor speed by varying the collector current. This can be achieved by changing the voltage applied across the base-emitter junction, allowing the transistor to regulate the amount of current delivered to the motor. This can be useful for applications such as speed and torque control.
The MJE15028 is also used in certain automotive applications due to its ability to operate at high voltages and handle large amounts of current. The device is often used as a power switch for controlling auxiliary lighting, such as the fog lamps and headlights. The device is also used for ignition control, where it can be combined with other transistors to form a high-current driver circuit.
Another application of the MJE15028 is in audio amplifiers. In these applications, the device can be used to regulate the current flow and produce clean sound without distortion. The device can also be used to produce switching signals for various circuits, such as an optically isolated interface module.
The MJE15028 is a reliable and cost-effective device that is suitable for a variety of power switching applications. With its ONO structure, the device is able to handle higher voltages and greater power dissipation than other types of transistors. The device is commonly used in motor control and certain automotive applications, as well as audio amplifiers and switching circuits.
The specific data is subject to PDF, and the above content is for reference
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