| Allicdata Part #: | 497-2590-5-ND |
| Manufacturer Part#: |
MJE182 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | TRANS NPN 80V 3A SOT-32 |
| More Detail: | Bipolar (BJT) Transistor NPN 80V 3A 50MHz 12.5W Th... |
| DataSheet: |  MJE182 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
| Power - Max: | 12.5W |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | SOT-32-3 |
| Base Part Number: | MJE182 |
Description
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The MJE182 is a single-contact bipolar junction transistor (BJT) that is mainly used for switching, amplification, and attenuation of signals. It is also known as a junction field-effect transistor (JFET). This transistor can be used in a wide variety of applications, including audio amplifiers, motor drivers, power control circuits, and high-frequency applications.The MJE182 is a silicon-controlled rectifier (SCR) type BJT that is made up of a silicon substrate and three layers of metallic semiconductor contacts. The substrate is often doped with boron or arsenic to increase its conductivity. The base layer is made up of two contact areas, while the emitter and collector layers are composed of one contact area each. This particular BJT is designed to operate in the common-collector configuration, meaning that the current flow is from the base to the collector.The MJE182 operates based on the principle of N-channel operation. In this type of operation, a positive bias voltage is applied to the base contact to activate it. This action initiates the flow of electrons from the base to the collector. As the current flow increases, an amplified signal is generated which can then be used in the application. The benefit of the N-channel operation is that the current flow is easily controlled, allowing for precision during signal amplification.The MJE182 is also known for its excellent gain characteristics. This transistor has a gain bandwidth product (GBW) of 1.61 GHz and a high current gain of 140. The high current gain makes the MJE182 ideal for amplifying sensitive signals, since the signal is amplified without losing any of its original quality. Additionally, the transistor can handle large amounts of power without degrading its performance, making it suitable for a variety of power applications.Another advantage of the MJE182 is its ability to operate in low-noise environments. This is due to its low-noise chip design and its low input bias current of just 10 pA. This allows for extremely quiet operation, which is ideal for applications where any grating background noise would interfere with signal integrity and accuracy.The MJE182 is also very reliable and durable. This transistor is designed to withstand high temperatures and can operate for over a million cycles without any degradation of its performance. Additionally, the MJE182 has high surge current capabilities and is designed to handle up to a hundred thousand volts of peak-to-peak voltage. This makes it suitable for use in high-voltage applications.Overall, the MJE182 is an ideal choice for a wide variety of applications. Its versatile design and high current gain make it suitable for both audio amplifiers and motor drivers, while its low noise and surge capabilities make it ideal for high-frequency and high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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