Allicdata Part #: | MMBTA56DITR-ND |
Manufacturer Part#: |
MMBTA56-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 80V 0.5A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 300mW... |
DataSheet: | MMBTA56-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 300mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBTA56 |
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。MMBTA56-7 is one type of single Bipolar Junction Transistor (BJT). Specifically, it is an NPN type of transistor. A BJT consists of three layers of semiconductor material, a collector, a base and an emitter, with the collector and emitter made of different types of semiconductor materials. The junction between the collector and substrate is called the collector-base junction and the junction between the emitter and base is called the emitter-base junction. All three terminals are labeled by the letter C (collector), B (base) and E (emitter).
The MMBTA56-7 can be used for a variety of applications, including logic gates and amplifier circuits. It is often used as a switching device and is thus commonly found in digital circuits. In addition, it can also be used to form oscillators, regulators and other frequency-determining circuits.
The working principle of the MMBTA56-7 is quite simple. When a small signal is applied between the base and emitter, the base-emitter junction has a certain voltage drop across it. This voltage drop causes electrons to flow from the base to the collector, creating a current from the collector to the emitter. The magnitude of this current is directly proportional to the applied signal. This current can then be amplified and used to control other circuits.
The MMBTA56-7 has several advantages over other types of transistors. It is particularly good at handling large amounts of current and has a relatively low power consumption. It is also quite fast, making it ideal for use in switching applications. Additionally, it has an excellent noise immunity, meaning it is less likely to pick up and pass on noise from other sources.
In conclusion, the MMBTA56-7 is an NPN type of single Bipolar Junction Transistor (BJT). It is particularly suitable for use in digital circuits, logic gates and frequency-determining circuits. It has several advantages, such as low power consumption, fast switching capability, and excellent noise immunity.
The specific data is subject to PDF, and the above content is for reference
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