Allicdata Part #: | MMBT4124DITR-ND |
Manufacturer Part#: |
MMBT4124-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 25V 0.2A SMD SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 200mA 300MHz 300m... |
DataSheet: | MMBT4124-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 1V |
Power - Max: | 300mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBT4124 |
Description
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MMBT4124-7 is a bipolar junction transistor (BJT) that is designed for use in a wide range of applications. This transistor is made up of two components: a base and an emitter, which are separated by an intrinsic region of silicon. It can be used in audio preamplifiers, power amplifiers, and linear amplifiers, as well as other general-purpose applications.The MMBT4124-7 is a single-transistor device, which means it only requires one active element to operate. This makes it a cost-effective solution in applications where space and power requirements are constrained. It is built using a silicon PN junction, which is formed between the base and emitter terminals, and has a lower voltage drop than other types of transistors, making it very efficient.The MMBT4124-7 can operate in both an NPN and PNP configuration, depending on the requirements of the application. In an NPN configuration, the base of the transistor is connected to the negative side of the device, while the collector, which is connected to the positive side, collects the electrical current. When operating in the PNP configuration, the base is connected to the positive side, while the emitter is connected to the negative side and collects the electrical current.The MMBT4124-7 is able to support higher currents, up to 450mA, compared to other transistors available on the market. It also has a high breakdown voltage and can support higher operating voltages of up to 100V.The working principle of the MMBT4124-7 is relatively simple. First, when a voltage is applied to the base of the transistor, it begins to conduct current through the emitter and collector. This current is then amplified and can be used for various applications. Additionally, the current can be controlled by adjusting the voltage applied to the base of the transistor, allowing for precise control of the device.MMBT4124-7 is an efficient, cost-effective transistor that can be used in a variety of applications. It can be used in audio preamplifiers, power amplifiers, and linear amplifiers, as well as other general-purpose applications. It has a high breakdown voltage and can support higher operating voltages of up to 100V. Additionally, it can support currents up to 450mA, making it an ideal choice for applications that require high current. The working principle of the MMBT4124-7 is relatively simple and it can be easily adjusted to meet the specific requirements of any application. With its versatility and high performance, it is an ideal choice for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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