Allicdata Part #: | MMBT2222ATDITR-ND |
Manufacturer Part#: |
MMBT2222AT-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 40V 0.6A SOT-523 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150m... |
DataSheet: | MMBT2222AT-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Base Part Number: | MMBT2222A |
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The MMBT2222AT-7 is a transistor in the Single Bipolar (BJT) Transistors category. This model of transistor has a variety of uses and is one of the most versatile transistors on the market. The device can provide a reliable, low-noise and low-cost means for controlling signals, switching, and amplification of audio, video and communication systems.
This NPN bipolar junction transistor (BJT) is typically used as an electronic switch and amplifier, allowing current in one direction while blocking the current the opposite direction. Its current gain allows it to amplify moderate-power signals over a wide range of frequency and power. The device is also well-suited for industrial and consumer applications such as audio and video devices, modulators, class B push-pull amplifiers and switching circuits.
The MMBT2222AT-7 is a TO-226AA (SOT-23) 3-pin plastic-encapsulated transistor. Its working voltage is approximately 0.3 to 20V. Its collector-emitter voltage of up to 70V ensures its reliability and performance. This device is also suitable for both low-side and high-side switching applications. It also has low on-state resistance, making it ideal for use in switching applications.
This device works on the principle of forward bias. When the base of the transistor is made positive relative to the emitter, it allows electrons to move from the base to the collector. This causes a buildup of positive charge around the base, which in turn creates a current in the base. This current then passes through the collector-emitter region and amplifies the signal.
This transistor can also be used to switch current. When the base of the transistor is made negative relative to the emitter, it shuts off the current flowing through the collector-emitter region. This is useful in switching applications, where the transistor needs to quickly turn on and off electric current.
The MMBT2222AT-7 can be used in a variety of different applications. It is suitable for use in audio, video and communication systems, modulators, class B push-pull amplifiers and switching circuits. It is also widely used in automotive and industrial applications. Its low operating voltage and small size make it ideal for use in compact and integrated circuits.
The MMBT2222AT-7 is an NPN transistor in the Single Bipolar (BJT) Transistors category. Its small size and low operating voltage make it ideal for use in low-power switching and amplification applications, such as audio and video devices, modulators, class B push-pull amplifiers and switching circuits.
This transistor works on the principle of forward bias and has a collector-emitter voltage of up to 70V. Its low on-state resistance enables it to amplify low-power signals over a wide range of frequency and power. It is also suitable for use in low-side and high-side switching applications.
In summary, the MMBT2222AT-7 is a useful, reliable and versatile transistor, suitable for use in a variety of audio, video, communication systems and industrial applications. It is small in size, has low operating voltage, and works on the principle of forward bias. Its low on-state resistance and collector-emitter voltage of up to 70V make it well-suited for use in switching and amplification circuits.
The specific data is subject to PDF, and the above content is for reference
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