MMBTA63LT1

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	10000 @ 100mA, 5V
Power - Max:	225mW
Frequency - Transition:	125MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBTA63

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Introduction

The MMBTA63LT1 is a single bipolar junction transistor (BJT) designed for applications where high gain and low drive current are desired. The MMBTA63LT1 has NPN construction with a wide range current gain of 300 to 500. This transistor is suitable for use in amplifiers and other circuits requiring high linearity and high power supply rejection.

MMBTA63LT1 Characteristics

The MMBTA63LT1 is a low saturation voltage (VCE(sat)) and low base drive TJT with high current gain and high voltage gain. The device has a low forward biased emitter-base voltage drop, which gives it superior linearity. Furthermore, it offers fast switching capability and a wide supply voltage range.

MMBTA63LT1 Application Fields

The MMBTA63LT1 is suitable for a variety of applications such as amplifiers, switching applications, power supplies, motor control circuits and other circuits requiring high linearity.In amplifiers, its low forward biased emitter-base voltage drop gives it superior linearity and high power supply rejection. Moreover, its wide supply voltage range of 1.5V to 12V makes it suitable for low-power, low-voltage amplifiers. In switching applications, its fast switching capability, low saturation voltage and wide supply voltage range makes it suitable for high-speed, high-voltage switching applications. For power supplies, its superior linearity and low saturation voltage allows it to regulate the output voltage even at high output currents. In motor control circuits, its low saturation voltage provides good thermal and electrical breakdown protection.

MMBTA63LT1 Working Principle

The MMBTA63LT1 is a NPN BJT which operates according to the conventional transistor theory. The base-emitter and base-collector junctions are forward biased, while the collector-emitter junction is reverse biased. The base-emitter junction is the active region of the transistor, and is responsible for the majority of the current flow. When a current is applied to the base-emitter junction, it creates a voltage drop across it which in turn causes current to flow from the collector to the emitter. The amount of current flow is controlled by the base current. An increased base current results in increased collector current. This can be used to control the collector current in applications such as amplifiers and switching applications.

Conclusion

The MMBTA63LT1 is a single bipolar junction transistor (BJT) suitable for applications where high gain and low drive current are desired. It is suitable for a variety of applications such as amplifiers, switching applications, power supplies, motor control circuits and other circuits requiring high linearity. It operates according to the conventional transistor theory, wherein the base-emitter junction is the active region of the transistor. The amount of current flow is controlled by the base current which can be used to control the collector current in applications such as amplifiers and switching applications.

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