MMBTA13-7 Allicdata Electronics
Allicdata Part #:

MMBTA13DITR-ND

Manufacturer Part#:

MMBTA13-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 30V 0.3A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 300m...
DataSheet: MMBTA13-7 datasheetMMBTA13-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 300mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBTA13
Description

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The MMBTA13-7 is a single-transistor, bipolar junction (BJT) type, high-voltage transistor manufactured by Fairchild Semiconductor.

The MMBTA13-7 is classified as high voltage, low current device. It has a maximum PNP current gain of 13 and a maximum NPN current gain of 7. It also has a high collector to emitter breakdown voltage of 30V. It is made from silicon and has a low forward voltage drop of 0.2V max.

The MMBTA13-7 is used for a variety of applications such as load switching, signal switching, and amplifier applications. It can be used in both small signal and low power applications. It is typically used in multiple amplifier stages, relay and solenoid drivers, unijunction transistors, as well as other digital logic and signal processing functions.

The working principle of the MMBTA13-7 is similar to other bipolar junction transistors. It consists of three terminals – the base, collector, and emitter. A small base current is applied to the transistor which then allows a larger current to flow between the collector and emitter. When the base voltage is increased, the current flow between the collector and emitter increases proportionately.

The MMBTA13-7 has two states – cut-off and saturation states. It is in the cut-off state when the base voltage is below the cutoff voltage. In this state, the collector current is zero. As the base voltage is increased, the collector current increases, and the transistor is then said to be in the saturation state. The saturated collector voltage is determined by the voltage drop across the collector and emitter.

The MMBTA13-7 has a wide range of applications due to its high voltage and low current specifications. It can be used to switch signals in audio circuits, regulate current in power supplies, regulate current in light emitting diodes, as well as other digital logic and signal processing related functions. Additionally, it can be used as a driver circuit for several inductive loads like a stepper motor, a solenoid valve, or an AC solenoid.

In conclusion, the MMBTA13-7 is a single-transistor, bipolar junction (BJT) type, high-voltage transistor manufactured by Fairchild Semiconductor. It is often used for load switching, signal switching, and amplifier operations. It is in the cut-off state when the base voltage is below the cutoff voltage and the saturated collector voltage is determined by the voltage drop across the collector and emitter. The MMBTA13-7 has a wide range of applications due to its high voltage and low current specifications, including audio and power supply circuits, light emitting diodes, and inductive loads.

The specific data is subject to PDF, and the above content is for reference

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