MMBTH81_F080

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Transistors are semiconductor components used to control the flow of electricity, acting as a switch. Bipolar transistors, otherwise known as BJTs, use two types of semiconductor materials, P-type and N-type to control current flow. RF or Radio Frequency transistors are a type of bipolar transistors that are specifically designed and optimized to operate at high frequencies, such the MMBTH81_F080. This article explores the application field and working principle of the MMBTH81_F080.

The MMBTH81_F080 is a Silicon NPN RF Transistor, designed for low frequency, high-power applications. It is a general purpose device, used for switch mode power supplies, amplifier and audio circuits, modulators, mixers, and detectors, among other things. The device is available in the SOT23-3 (UMT3) packaging and has a Pb-free lead(PbF) finish, with halogen-free requirements.

The MMBTH81_F080 features a maximum current gain of 80, with a low collector to emitter saturation voltage of 175mV, making it suitable for applications with low voltage and over-current requirements. It is also built with high power ratings, allowing it to operate in high power circuits, such as motor or compressor control, solenoid, or lighting applications. In addition, the MMBTH81_F080 offers a low noise level of 2.9dB, and excellent RF performance with a gain bandwidth product of 14MHz, a response time of 70ns, and a switching time of 150ns. Its high frequency and low noise characteristics also makes it suitable for high-speed signal processing applications in communication systems.

The MMBTH81_F080 is a standard NPN BJT. It has three parts, a base, a collector, and an emitter. The current moving through the transistor is mostly driven by a current from the base. A small current in the base causes a larger “collector” to flow in the transistor. Basically, the base will control how much current flows from the collector to the emitter. The transistor is “on” when the current passes through the base, thus allowing the larger current to pass from the collector to the emitter. The transistor is “off” when no current is passing though the base, thus preventing the current from passing from the collector to the emitter.

When using the MMBTH81_F080 in an application, it is important to take into consideration the maximum ratings and operating conditions. The maximum ratings for the MMBTH81_F080 are Collector to Base Voltage (Vcb) of 40V, Collector to Emitter Voltage (Vce) of 40V, Collector Dissipation (Pc) of 600mW, and Operating and Storage Junction Temperatures of +150ºC and +175ºC, respectively. For its operating conditions, the MMBTH81_F080 has a Collector Current (Ic) of 120mA, a Maximum Current Gain (hfe) of 80, a Frequency Response of 4MHz, and a collector to emitter saturation voltage of 175mV.

In conclusion, MMBTH81_F080 is a high-performance, high-power NPN RF transistor, designed for low frequency, high-power applications, such as switch mode power supplies, amplifiers and audio circuits, modulators, mixers, and detectors, among other things. It is important to consider the maximum ratings and operating conditions when using the MMBTH81_F080, in order to get optimal performance.

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