MMDT2907V-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	150mW
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563
Base Part Number:	MMDT2907V

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MMDT2907V-7 Application Field and Working Principle

The MMDT2907V-7 is a dual, monolithic, Darlington transistor array that replaces two general-purpose switching transistors in a wide variety of applications. It is commonly used in communication systems, computer systems, and consumer electronic products.The MMDT2907V-7 is composed of two NPN transistors, each with an integrated Darlington transistor array, which extends the reach of each unit beyond a standard discrete transistor output. This allows the device to switch large currents quickly, efficiently, and accurately. Additionally, due to the high degree of integration into the device, the MMDT2907V-7 requires fewer external components than a discrete solution, resulting in a smaller footprint.The working principle of the MMDT2907V-7 is based on the Darlington tandem connection of two discrete transistors. In this configuration, a single input voltage is applied to a collector-emitter pair of each Darlington transistor. This drives current through the Darlington transistor array, allowing for current gain as well as power gain of the system.The two transistors of the MMDT2907V-7 are arranged in a complementary manner, which allows for two separate outputs, both capable of carrying large currents and maximizing the power output from the device. Due to its two output stages, the MMDT2907V-7 can be used to control the current flow in two different directions, allowing for bi-directional logic switching.The MMDT2907V-7 also features reverse breakover protection, which prevents reverse voltage and current flows. This is essential when using the device in a bi-directional power or capacitive load configuration. Additionally, the device is designed to have a high degree of resistance to latch-up due to its low-leakage bipolar junction transistors, which allows it to be used in high-speed circuits.The MMDT2907V-7 is an ideal choice for applications requiring high switching current, high current gain, low energy consumption, or a combination of all three requirements. It can be used in a variety of applications, including audio amplifiers, electronic automotive systems, and industrial control systems. Further, its wide range of features and performance make it suitable for many other applications, including RF amplifiers, telecommunications, automotive, and industrial applications.To summarize, the MMDT2907V-7 is a dual, monolithic, Darlington transistor array that enhances the performance of circuits in the areas of switching and current control. Its integrated design offers a compact solution for applications requiring increased current gain, reduced parts count, and improved reliability, making it an ideal choice for communications and other electronic systems.

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