Allicdata Part #: | MMDT4401-FDITR-ND |
Manufacturer Part#: |
MMDT4401-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN 40V 0.6A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 60... |
DataSheet: | MMDT4401-7-F Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | MMDT4401 |
Description
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The MMDT4401-7-F is a type of BJT array — a multi-transistor integrated circuit based on Bipolar Junction Transistors (BJTs). It is a dual N-Channel Darlington transistor array with a incorporated UL-Compliant open-drain circuit and expands the capabilities of digital input applications.A BJT Array is a type of transistor array which is an electronic component composed of two or more transistors in a single package. These integrated circuits are important for many applications including power management, amplification, switching and logic circuits. In addition to its compact profile, other advantages of using a BJT array include increased selectivity, improved linearity and lower noise performance.The MMDT4401-7-F can be used in a wide range of applications such as switching, power supply control, motor control, protection and signal conditioning. As an open-drain circuit, the MMDT4401-7-F is used in applications where the output needs to indicate whether a logic signal is present or not. A BJT array can be more cost-effective than using multiple single BJTs as it eliminates the need for several components. The MMDT4401-7-F has three legs — base, emitter and collector — with each leg having a specific purpose. When a voltage is applied to the base, it allows electrons to flow from the emitter to the collector, creating the amplified current. This amplified current then travels through the load. The amount of amplification can be controlled by changing the voltage to the base. This can range from a low-level amplification (current gain) to a higher-level amplification (voltage gain).When it comes to power dissipation, the power dissipation of a BJT array can be up to 50 times lower than that of a single BJT. This is because an array can have multiple transistors connected together which reduces the resistance between them, and therefore reduces the overall power dissipation. The MMDT4401-7-F is designed to have an enhanced output drive capability and an improved slew rate. In conclusion, the MMDT4401-7-F is a type of Bipolar Junction Transistor Array with an integrated UL-Compliant open-drain circuit and is used for a wide range of applications including switching, power supply control, motor control, protection and signal conditioning. It has a compact profile, increased selectivity, improved linearity and lower noise performance. In addition, it has an enhanced output drive capability and an improved slew rate.
The specific data is subject to PDF, and the above content is for reference
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