MRFE6S9135HSR5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRFE6S9135HSR5, or Infineon’s FET, is a type of RF FET that is used in a variety of applications. It is a MOSFET (metal-oxide semiconductor field-effect transistor) that is suited for use in high power microwave and analog applications.

A FET is an acronym for "Field Effect Transistor". They are three-terminal devices that utilize the effect of an electric field to control the flow of electrical current. A FET comprises of a source and a drain, separated by an insulating gate. When an electrical charge is applied to the gate, it creates an electric field, which in turn modulates the current flowing between the source and the drain. This makes FETs particularly useful in transistor-level circuits such as amplifiers or oscillators.

The MRFE6S9135HSR5 is an RF FET that operates in the range of 0.1 - 2 GHz (1 GHz = 1000 MHz). The device is built using 24V/35V H3 MOSFET technology and has a maximum power rating of 80 W. It features a good input match, low thermal resistance and good ruggedness.

This FET is particularly useful in applications that require high-power operation and a wide frequency range, such as TV transmitters and power amplifiers. In addition, it can be used for applications in cellular base stations, WiMAX, and other wireless communication systems. It’s also suitable for high-power amplifier stages, radio frequency switching circuits and RF amplifiers.

The MRFE6S9135HSR5 is capable of achieving a high level of linearity, allowing it to be used for analog applications. The device is characterized by low distortion, low output voltage noise, and high gain linearity. It is also capable of withstanding high voltages up to 48 V.

The device works by taking an input signal and amplifying it. It then passes the amplified signal to the output stage of the circuit. This output stage is where the power of the device is shown and where the actual amplification occurs. This is done by manipulating the current flowing through the device channel. When the current flow is increased, the output is increased as well.

The MRFE6S9135HSR5 is an ideal choice for power applications. It is robust and provides high gain linearity for up to 80 W of output power. This makes it suitable for TV transmitter, cellular base station, power amplifier, radio frequency switching and amplified circuits, and many more.

The specific data is subject to PDF, and the above content is for reference