MRFE6S9135HR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	940MHz
Gain:	21dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1A
Power - Output:	39W
Voltage - Rated:	66V
Package / Case:	NI-880
Supplier Device Package:	NI-880
Base Part Number:	MRFE6S9135

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<div><h2>MRFE6S9135HR5 Application Field and Working Principle</h2><p>The MRFE6S9135HR5 device is an advanced high performance N-Channel Enhancement Mode Field Effect Transistor (FET) with better FET characteristics and higher reliability. This article provides an overview of the device and its application field, as well as its working principle.</p><h3>Device Overview</h3><p>The MRFE6S9135HR5 is an N-Channel Enhancement Mode GaAs FET that is commonly used in radio frequency (RF) amplifiers, radio frequency oscillators and other radio frequency circuits. It features an on-resistance of 3.5 Ohms and an off-resistance of 11.5 Ohms. It has a small signal gain of 19.4 dB at 900 MHz and a power gain of 17.4 dB at 900 MHz. It also has an isolation voltage of 28 V, a thermal resistance of 0.85 K/W, and an operating temperature range of -65°C to +175°C.</p><h3>Application Field</h3><p>Due to its low on-resistance, high reliability and small size, the MRFE6S9135HR5 is particularly suitable for use in RF applications. It can be used in circuit applications that require high frequency and large current signal amplification, such as GSM/PCS phones, cordless phones, and point-to-point (PTP) radio systems. Additionally, due to its wide temperature range, it can also be used in automotive, medical and aerospace applications.</p><h3>Working Principle</h3><p>The MRFE6S9135HR5 operates on the enhancement mode field effect transistor (FET) principle. The FET is composed of a source, gate and drain. The source and drain electrodes form the two terminals of the transistor and are separated by the gate. When a voltage is applied to the gate electrode, it causes an electric field that causes the electrons to move towards the positive side (source), forming an electrical channel. This channel has a gate to drain capacitance that reduces the effects of the gate voltage on the drain current. The width of this channel is modulated by the gate voltage, thus controlling the amount of current flowing through the transistor.</p><p>In the MRFE6S9135HR5, the gate is an N-Type material. This means that the gate is positively biased, attracting electrons from the source. When a voltage is applied to the gate, an electric field is created between the gate and the drain. The electric field attracts electrons from the source and forms a conducting channel between the source and the drain (which is usually an oxide layer). The width of this channel can be controlled by the gate voltage, thus allowing the transistor to be used to amplify small signals.</p></div>

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