MRFE6VP5150NR1

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Full model: MRFE6VP5150NR1

Manufacturer: NXP Semiconductors

Device type: RF power LDMOS transistor

Package: HVFM-4 (ceramic flange package)

Operating frequency: 1.8 - 600MHz (broadband design)

Operating voltage: 50V (typical)

Operating temperature: -40°C ~ +150°C (junction temperature)

Output power: 1500W (PEP, @30MHz)

Gain: 22dB (typical, @30MHz)

Efficiency: 75% (typical, @30MHz)

Input/output impedance: 50Ω (matched design)

Drain current: 40A (maximum)

VSWR withstand capability: 65:1 (full phase)

Description

The MRFE6VP5150NR1 is a high power Silicon Carbide (SiC) based Gallium Nitride (GaN) Field Effect Transistor (FET) designed for high frequency applications from 18GHz to 27GHz. The device is suitable for pulsed power amplifiers, radar and system amplifiers, military amplifiers, and many other applications that require high efficiency, high linearity, and small size. This type of transistor is a three-terminal active element that uses a narrow bandgap semiconductor material between the source and drain. A weak electric field is generated between the gate and the source and drain, forming a current path. The device has higher energy efficiency and higher breakdown voltage than more traditional silicon-based transistors, allowing it to handle higher frequencies. The MRFE6VP5150NEX1 is ideal for high power radio frequency (RF) amplifier applications. It has high linearity and high gain, making it ideal for medium power applications such as communications and radar systems. The device is also suitable for pulsed applications such as pulsed power amplifiers and military applications. Due to its high power output, it can also be used in projects that require high current. This occurs when the gate voltage is increased to the point where the device begins to switch within a specific range, typically between 500 volts and -50 volts. The gate voltage controls the drain electron current in the device, allowing it to operate within a specific frequency range. Its ability to operate at different amplitudes with low distortion also enables it to be used in a variety of applications.

Features

   1. Wide Operating Frequency Range

   2. Extreme Ruggedness

   3. Unmatched Input and Output Allowing Wide Frequency Range Utilization

   4. Integrated Stability Enhancements

   5. Low Thermal Resistance

   6. Integrated ESD Protection Circuitry

   7. In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

Core features

   1. Ultra-high power handling:

       - 1500W peak envelope power (PEP)

       - Supports AM/FM/SSB modulation modes

   2. Broadband performance:

       - 1.8MHz to 600MHz continuous operation

       - Built-in ESD protection diode

   3. Industrial-grade reliability:

       - 100% RF parameter test

       - Pass MIL-STD-750 environmental test

   4. Simplified design:

       - Pre-matched input/output (reduce external matching components)

       - Flange mounting holes comply with IEEE 802.3 standard

Pin definition (HVFM-4 package)

Typical application circuit

      HF amplifier design:

                     RF IN ────┬── Input matching network ─── Gate

                                         │

                                       VDD (50V) ──── Drain

                                         │

                                       GND ──────── Flange (heat sink)

Design considerations

   1. Thermal management:

       - Thermal conductive silicone grease must be used (thermal resistance <0.3°C/W)

       - Recommended heat sink temperature <85°C

   2. RF layout:

       - 50Ω impedance control for input/output traces

       - 1000pF+100nF high-frequency capacitors in parallel with power pins

Application scenarios

   1. Broadcast transmitter: AM/FM radio

   2. Industrial heating: RF energy system

   3. Military communications: high-frequency and high-power amplification

   4. Scientific research equipment: particle accelerator RF source

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