MRFE6VP8600HSR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	860MHz
Gain:	19.3dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.4A
Power - Output:	125W
Voltage - Rated:	130V
Package / Case:	NI-1230S
Supplier Device Package:	NI-1230S
Base Part Number:	MRFE6VP8600

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The MRFE6VP8600HSR5 is a type of Field Effect Transistor (FET) specifically designed for use in Radio Frequency (RF) applications. It is part of a family of field effect transistors designed for use in the telecommunications industry. FETs are a type of transistor used in a variety of electronic applications, including switching and amplifier circuits.The MRFE6VP8600HSR5 is a depletion-mode FET, which means that it operates differently from the more common enhancement-mode FETs. In an enhancement-mode FET, also known as an enhancement-type transistor, the channel of a transistor is "opened" by the application of a gate-voltage. This causes the gate to pull electrons from the source, which causes a current to flow. In contrast, a depletion-mode FET works in the opposite direction. When a gate voltage is applied in a depletion-mode FET, the gate pulls electrons away from the source, which causes a decrease in current.The MRFE6VP8600HSR5 is a low-frequency FET, which means it is designed to operate at frequencies below 1MHz. It is an N-channel enhancement-mode FET, which means it is designed to handle higher currents than its P-channel counterpart. It has a gate current of 0.4mA, gate-drain capacitance of 0.9pF, and a maximum gate-source voltage of 28V.The MRFE6VP8600HSR5 has a range of applications, including RF amplifiers, RF mixers, RF oscillators and RF modulators. It is also used in high-frequency switching circuits, as well as high-power, high-frequency amplifier circuits.The MRFE6VP8600HSR5 is designed to be used in a dual-gate configuration, with the second gate serving as the input and the first gate serving as the output. When a signal is applied to the input gate, it will be amplified before being sent to the output gate. This provides better performance than what can be achieved with a single-gate FET.The MRFE6VP8600HSR5 has a number of advantages, including high gain, low power consumption and high speed. It is also relatively easy to use.When looking for a device to meet the needs of your next project, consider the MRFE6VP8600HSR5. This FET is designed to provide superior performance in a range of RF applications. With a range of advantages and a versatile design, it is an ideal choice for a variety of applications.

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