MRFE6VP61K25GNR6

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	230MHz
Gain:	23dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	100mA
Power - Output:	1250W
Voltage - Rated:	133V
Package / Case:	OM-1230G-4L
Supplier Device Package:	OM-1230G-4L

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MRFE6VP61K25GNR6 Application Field and Working Principle

MRFE6VP61K25GNR6 transistors are a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for use in radio frequency (RF) applications. MOSFETs are a type of switching device used in a wide range of electronics, including computers, audio amplifiers, and power management circuits. They are especially useful in RF design, as they are able to switch high frequency signals with minimal loss or distortion. The MRFE6VP61K25GNR6 is a bidirectional MOSFET available in two package varieties.The MRFE6VP61K25GNR6 is a N-Channel Enhancement Mode MOSFET with dual-gate electrodes. It is a fixed frequency device ranging from 0.2 to 3.5 GHz. It has a low insertion loss and high isolation. The MRFE6VP61K25GNR6 is available as a surface mount in a 6 lead SOT143 (Small Outline Transistor) package, or as a discrete device in a 6 lead SOT163 (Multi-Mode Transistor) package. It is also available as a through hole device in a 6 lead TO-220 package.The MRFE6VP61K25GNR6 is used in a wide range of RF applications, such as cellular base stations, wireless LAN systems, land-mobile radio systems, radar, satellite communications, cable television, broadcast television, and satellite radio. It is most commonly used in applications requiring a very low insertion loss, such as duplexers, power amplifiers, filters, and linear attenuators.The MRFE6VP61K25GNR6 is able to quickly switch high frequency signals with minimal loss or distortion. This is due to its low on-state resistance, high input and output capacitance, and high speed characteristics. The MRFE6VP61K25GNR6 also has excellent temperature stability, making it suitable for use in high temperature and harsh environments.The working principle of the MRFE6VP61K25GNR6 is based on the principle of “field effect.” The gate terminal of the MOSFET controls the flow of current through the channel, by creating a field effect. When the gate voltage is low, the device is off. The resistance between the source and drain terminals is very high. When the gate voltage is applied, it attracts the electrons in the channel region, reducing the resistance between the source and drain, and allowing current flow. As the gate voltage is increased, the current flowing through the channel increases, and the MOSFET is considered to be in the “on” state.The MRFE6VP61K25GNR6 is an advanced device, suited for use in high frequency, temperature sensitive applications. Its low on-state resistance, and high speed characteristics make it increasingly popular for use in radio frequency devices. The MRFE6VP61K25GNR6 is a reliable and effective device for numerous RF applications.

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