MRFE6S9130HSR3

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The MRFE6S9130HSR3 is an advanced and robust power field effect transistor (FET) technology, developed and manufactured by the leading wireless solutions and devices manufacturer, Freescale Semiconductor. The optimized device is designed specifically for RF applications, where it can deliver an impressive level of performance while maintaining high efficiency, reliability and long-term durability.

The MRFE6S9130HSR3 is a surface-mount, N-channel, internal enhanced power (E-mode) GaAs FET that comes in a small and leadless plastic, Dual-Flat-No-Lead (DFN) style package. It is a low noise, high linearity FET with very low gains that are ideal for broadband applications. With a fixed-high power for both large and small signal, the MRFE6S9130HSR3 boasts of an optimized noise figure and excellent linearity performance over the entire frequency range.

With its outstanding performance in terms of high power handling and efficiency and long-term reliability and durability, the MRFE6S9130HSR3 is ideally suited for a wide range of RF applications. These include cellular base stations, point-to-point radios, Wi-Fi networks, radar systems, and communication infrastructure. The device is also capable of supporting high data rate applications in the long-term evolution (LTE) standards.

The MRFE6S9130HSR3 is based on a unique monolithic FET design which includes a magnesium doped epitaxial layer, a gate oxide of a single monocrystalline silicon and a platinum-plated gate contact. This advanced design allows for extremely high current gain and high breakdown voltages, simultaneously providing excellent temperature stability, reliability and efficiency.

The working principle of the MRFE6S9130HSR3 is based on the flow of electrons from the source to the drain. When a gate voltage is applied to the gate terminal, more electrons from the source are drawn through the semiconductor channel, increasing the current flow from source to the drain. This is the basic principle behind the functioning of a FET.

The MRFE6S9130HSR3 implements this principle across its entire range of frequencies. It works well with low frequencies, medium frequencies and even very high frequencies. This allows it to be ideal for applications that require high power gain, low noise, and excellent linearity performance over a wide range of frequencies. It is an extremely cost-effective component for RF applications and is sure to become increasingly more popular in the near future.

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