MRFE6VP6300HR5

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MRFE6VP6300HR5 is an advanced high-power field-effect transistor (FET) designed for operation in the 2300 and 2690 MHz frequency bands. It is primarily used for high-efficiency RF amplifiers, and is ideal for applications such as high-power amplifiers (HPAs), repeaters, and transmitters. The MRFE6VP6300HR5 is a common-source power FET with a built-in gate protection circuit, allowing it to operate in very high power conditions.

MRFE6VP6300HR5 is an advanced FET designed for applications in the 2300 and 2690 MHz frequency bands. It has a field-effect n-channel topology comprising a dielectric layer, gate electrode, ohmic contacts, and a source electrode. The HPA built around the FET includes a bias network, input and output matching, and thermal management circuitry that ensure optimal performance. The FET is also suitable for microwave switching, wideband amplifiers and high-efficiency power amplifiers. It has outstanding linearity at high powers, enabling high-speed operation with no interference.

The MRFE6VP6300HR5 has a total gate capacitance of 4.2 pF, a maximum rated drain-source voltage of 45V, and a maximum drain current of 11.5A. It has high break-down voltage of 600V, a minimum input third-order intercept point of 43 dBm, and high gain of 26 dB at 2.45GHz. The FET has an operating temperature range from -55°C to +150°C and a thermal resistance of 1.70°C/W for safe and reliable operation.

MRFE6VP6300HR5 offers excellent thermal management, allowing for stable operation even in harsh environmental conditions. The advanced technology used in the device allows it to operate over a wide range of temperatures, with relatively low power consumption. The EMI shielding of the FET also makes it suitable for use in RF amplifiers applications where high levels of EMI must be controlled.

The MRFE6VP6300HR5 works on the principle of repelling like charges. When there is an electric field applied across the gate and source, the electrons are repelled to the gate electrode, resulting in a high concentration of electrons on the gate electrode. This creates an inversion layer at the channel which increases the channel conductance, resulting in an amplification of the input signal. The amplified signal then passes through the drain-source path, which results in the desired output.

The MRFE6VP6300HR5 is an ideal device for high power RF amplifier applications. Its part number reflects its various features such as its gate capacitor tolerance, gate voltage, drain-source voltage, source impedance, etc. The device offers high level of performance and reliability for high-power RF amplifier applications such as transmitters, repeaters, and HPAs. It is also suitable for applications such as wideband amplifiers, microwave switching and high efficiency power amplifiers.

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