MRFE6VP61K25HSR5

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The MRFE6VP61K25HSR5 is an RF power MOSFET developed by Freescale Semiconductor. It provides low loss and high power density in a small package. The device is a key component in a wide range of applications requiring high power and wideband performance, including base stations, active antennas, and portable radios.

The MRFE6VP61K25HSR5 is a dual MOSFET housed in a surface-mount plastic package. It features a low RDS(ON) (on-resistance) of 0.0025 Ω and a maximum drain efficiency of 98%. The device is designed with a 480V drain-source breakdown voltage and a static gate bias at 25W. These features make the MRFE6VP61K25HSR5 an ideal choice for RF power applications that require high power density and efficiency.

The MRFE6VP61K25HSR5 can be used in a wide range of applications, such as radio frequency amplifiers, switched-mode power supplies, and other high power applications. These devices can also be used for the design of active antennas, rapid prototyping and chip-on-board projects, and for the development of high power L-Band transmitters.

The MRFE6VP61K25HSR5 is a versatile device that can be used to drive all kinds of high power RF power amplifier applications. It is optimized to deliver high levels of efficiency, while maintaining low distortion levels. This makes the device ideal for use in high power radios, base stations and other broadcast applications, which require higher levels of accuracy and reliability.

The MRFE6VP61K25HSR5 is based on an advanced MOSFET technology, which provides excellent thermal characteristics and high current capacity. Its thermal impedance is low and it requires only a few external components. The device also features a fixed gate bias of +25W, which is ideal for operation at temperatures as high as 250°C.

The working principle of the MRFE6VP61K25HSR5 is based on field-effect transistor (FET) technology. The device conducts current between the drain and source terminals when a voltage is applied to the gate terminal. The device is designed to operate at very high frequencies, and it is able to switch hundreds of times per second.

The device is designed to provide high levels of performance and accuracy. Its low on-resistance, high efficiency and low distortion characteristics make it an ideal choice for a wide range of applications. Its small size makes it easy to install and its thermal characteristics make it suitable for use in high temperature environments.

When used in RF power amplifier designs, the MRFE6VP61K25HSR5 offers excellent performance and reliability. The device is capable of providing high linear power output while maintaining low distortion levels. It is suitable for use in a variety of applications, including active antennas, transmitters, base stations and portable radios.

In summary, the MRFE6VP61K25HSR5 is a versatile dual MOSFET designed for RF power applications. It provides excellent performance, low on-resistance, high efficiency and low distortion characteristics in a small package. It is powered by an advanced FET technology and can be used in a wide range of applications requiring high power and wideband performance.

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