MRFE6S9135HR3

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The MRFE6S9135HR3 is a high-performance N-channel enhancement-mode field-effect transistor (FMET) designed for RF applications. It features low-noise characteristics and high resistance to self-heating. This makes it ideal for use in a wide range of radio frequency (RF) applications, from cell phones to car security systems.

The MRFE6S9135HR3 is a single-gate FMET. It is constructed around a single, single-mode field effect channel. A single-mode field effect channel is one in which the applied voltage is controlled by the voltage applied to the gate. When the gate voltage is increased, the transistor’s resistance decreases and it becomes more conductive. When the gate voltage is decreased, the transistor’s resistance increases and it becomes less conductive.

The MRFE6S9135HR3 is an ideal choice for RF applications because it has low noise characteristics and high resistance to self-heating. This helps reduce the number of spurious signals generated in the circuit. It also helps to reduce the chance of feedback and oscillations.

The MRFE6S9135HR3 is also a good choice for applications that require high power. It can handle drain currents of up to 255 milliamps and can frequently switch up to 50V when it is used as an amplifier. It can also withstand drain voltages of up to 100V.

The MRFE6S9135HR3 is also an ideal choice for applications that require signal isolation and signal delay. The transistor’s large on-resistance allows it to function as a resistor that can isolate signals, as well as providing signal delay. This can be useful for a variety of applications, such as buffering signals, preventing signal inversion, and shaping pulses.

The MRFE6S9135HR3 is a high-performance, low-noise N-channel enhancement-mode field effect transistor that is ideal for use in a wide range of RF applications. Its low noise characteristics and high resistance to self-heating make it well-suited for use in amplifier, signal delay, and signal isolation applications.

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