| Allicdata Part #: | MRFE6S9130HR3-ND |
| Manufacturer Part#: |
MRFE6S9130HR3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 66V 880MHZ NI-780 |
| More Detail: | RF Mosfet LDMOS 28V 950mA 880MHz 19.2dB 27W NI-780 |
| DataSheet: |  MRFE6S9130HR3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 880MHz |
| Gain: | 19.2dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 950mA |
| Power - Output: | 27W |
| Voltage - Rated: | 66V |
| Package / Case: | NI-780 |
| Supplier Device Package: | NI-780 |
| Base Part Number: | MRFE6S9130 |
Description
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MRFE6S9130HR3 is a modestly-priced and widely popular RF (radio frequency) MOSFET (metal-oxide-semiconductor field-effect transistor) that has been versatilely used in a variety of applications, such as broadcasting, high-power linear amplifiers, and other power DC-to-AC conversion applications. It is designed for use in high gain broadband communication systems operating in the VHF and UHF bands. This paper introduces the application field and working principle of MRFE6S9130HR3.
Application Field of MRFE6S9130HR3
MRFE6S9130HR3 is widely used in broadcasting, in high-power linear amplifiers and other power DC-to-AC conversion applications. It has a wide array of features, including:- High-frequency response (1.05 to 700 MHz)
- High output power (150W)
- High gain and power density
- High efficiency
- Low noise
Working Principle of MRFE6S9130HR3
The working principle of MRFE6S9130HR3 is rooted in the physical working principle of MOSFETs, which describe how an electric current is regulated by an electric field. MOSFETs are insulated-gate field-effect transistors that use an electric field to control the electrical current flow in the semiconductor channel of a transistor.When the gate-source voltage of the MRFE6S9130HR3 reaches a certain threshold, it activates the conductive channel between the source and the drain. This completes the conduction path and current flows through the channel. The higher the gate voltage, the greater the current that flows.Due to its thick Ohmic contact, MRFE6S9130HR3 enables a low power consumption compared to other RF MOSFETs. This makes it well suited for applications requiring low power consumption, such as wireless communication systems.Conclusion
MRFE6S9130HR3 is a high performance RF MOSFET that has high gain and power density, high efficiency, high frequency response and low noise. It is widely used in broadcasting, in high-power linear amplifiers and other power DC-to-AC conversion applications. Its working principle is based on the physical working principle of MOSFETs, which describes how an electric current is regulated by an electric field.The specific data is subject to PDF, and the above content is for reference
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