MRFE8VP8600HSR5

Series:	--
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	860MHz
Gain:	21dB
Voltage - Test:	50V
Current Rating:	20µA
Noise Figure:	--
Current - Test:	1.4A
Power - Output:	140W
Voltage - Rated:	115V
Package / Case:	NI-1230S-4S
Supplier Device Package:	NI-1230S-4S

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Introduction
The MRFE8VP8600HSR5 is a high-power, high-frequency N-Channel Enhancement Mode Radio Frequency (RF) Field Effect Transistor (FET). It is designed to be used as a highly linear amplifier in mobile communications and radio broadcast applications, among other radio frequency applications. The MRFE8VP8600HSR5 features excellent thermal stability, good power and voltage gain, low current distortion, excellent RF linearity and low noise figure. In this article, we will discuss the application field and working principle of the MRFE8VP8600HSR5.

Application Field of the MRFE8VP8600HSR5
The MRFE8VP8600HSR5 transistor is mainly used in high frequency applications such as mobile communications and radio broadcast applications. It can also be used for RF amplifiers and PA stages for radio transmitters, modulators and exciters in various radio applications. It can also be used in high power amplifiers for two-way radio communication systems, radio base station amplifiers, and many other related radio communication applications.

Working Principle of the MRFE8VP8600HSR5
The MRFE8VP8600HSR5 is an RF FET, which is basically a type of transistor with an active region known as an "enhancement mode". The enhancement mode is the mode which allows the transistor to be used to amplify signals. This type of transistor works in the same way as a Field Effect Transistor, or FET. The MRFE8VP8600HSR5 uses a high frequency signal to control the voltage and current of the transistor. When a voltage is applied to the Gate of the transistor, it causes a depletion in the layer of electrons between the source and the drain, which in turn causes a change in the current flow. This change in current allows the transistor to amplify the radio frequency signal that is applied to it.

Conclusion
The MRFE8VP8600HSR5 transistor is a high-power, high-frequency N-Channel Enhancement Mode Radio Frequency (RF) Field Effect Transistor (FET). It is mainly used in high frequency applications such as mobile communications and radio broadcast applications. The MRFE8VP8600HSR5 works by using a high frequency signal to control the voltage and current of the transistor, and this allows the transistor to amplify radio frequency signals that are applied to it.

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