MRFE6VS25LR5 Discrete Semiconductor Products |
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Allicdata Part #: | MRFE6VS25LR5TR-ND |
Manufacturer Part#: |
MRFE6VS25LR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 133V 512MHZ NI360L |
More Detail: | RF Mosfet LDMOS 50V 10mA 512MHz 25.9dB 25W NI-360 |
DataSheet: | MRFE6VS25LR5 Datasheet/PDF |
Quantity: | 150 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 512MHz |
Gain: | 25.9dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 10mA |
Power - Output: | 25W |
Voltage - Rated: | 133V |
Package / Case: | NI-360 |
Supplier Device Package: | NI-360 |
Base Part Number: | MRFE6VS25 |
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MRFE6VS25LR5 application field and working principle
MRFE6VS25LR5 belongs to a type of high-power RF transistors. This type of transistor, which is often abbreviated as RF transistor, is a kind of transistors that use radio frequency signals to produce operating signals between 30kHz and 300GHz. MRFE6VS25LR5 is an advanced type of RF transistors, which is characterized by a high power rating, high gain, low noise and high linearity, allowing it to be used in a wide range of applications, including communications, consumer electronics, industrial electronics, and aerospace.
Application Field
MRFE6VS25LR5 can be used in a variety of radio frequency applications. In the consumer electronics field, it is used in audio systems and television sets, both in RF devices and audio-frequency systems. In telecommunications, it is used in wireless networking, as well as in two-way radio systems and remote access systems. Furthermore, it is often used in a variety of industrial applications, including industrial automation, sensors, and data collection machines. Last but not least, it is also designed to be used in the aerospace field, primarily to transmit, receive, and switch radio frequency signals.
Working Principle
The working principle of MRFE6VS25LR5 is based on the principle of field-effect transistors (FETs). FETs operate on the basis of modified capacitance, which is caused by the interaction between electric and magnetic fields. When a voltage is applied to one element of the device, the electric field is increased and the barrier between the source and drain is rapidly reduced. This allows for current to flow in both directions.
MRFE6VS25LR5 takes advantage of its high linearity, which means that it can amplify both high and low frequencies with very little distortion. It also uses the variable capacitance principle to modulate the amplitude of the transmitted signal, allowing for signal transmissions that are efficient and reliable. Lastly, its low noise makes it ideal for sensitive applications.
Conclusion
Overall, MRFE6VS25LR5 is a powerful and advanced type of RF transistor, which is characterized by its high power rating, high gain, and low noise. It is used in a variety of radio frequency applications, including consumer electronics, telecommunications, industrial electronics, and aerospace. Furthermore, it works on the principle of field-effect transistors and uses its high linearity and variable capacitance principle to effectively modulate the transmitted signal.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MRFE6VS25NR1 | NXP USA Inc | 13.9 $ | 500 | FET RF 133V 512MHZ TO270-... |
MRFE6VS25LR5 | NXP USA Inc | -- | 150 | FET RF 133V 512MHZ NI360L... |
MRFE6VP5300NR1 | NXP USA Inc | 36.26 $ | 500 | FET RF 2CH 133V 230MHZ TO... |
MRFE6VP6300HR5 | NXP USA Inc | 65.58 $ | 950 | FET RF 2CH 130V 230MHZ NI... |
MRFE6VP5600HR5 | NXP USA Inc | 109.96 $ | 100 | FET RF 2CH 130V 230MHZ NI... |
MRFE6VP6600NR3 | NXP USA Inc | -- | 250 | TRANS RF LDMOS 600W 50VRF... |
MRFE6S9045NR1 | NXP USA Inc | 14.62 $ | 1000 | FET RF 66V 880MHZ TO-270-... |
MRFE6VS25GNR1 | NXP USA Inc | -- | 1000 | FET RF 133V 512MHZ TO-270... |
MRFE6S9060NR1 | NXP USA Inc | -- | 1000 | FET RF 66V 880MHZ TO270-2... |
MRFE6VP5150NR1 | NXP USA Inc | -- | 1000 | FET RF 2CH 133V 230MHZ TO... |
MRFE6VP5150GNR1 | NXP USA Inc | 19.38 $ | 1000 | FET RF 2CH 133V 230MHZ TO... |
MRFE6VP5300GNR1 | NXP USA Inc | 37.39 $ | 1000 | FET RF 2CH 133V 230MHZ TO... |
MRFE6VP61K25NR6 | NXP USA Inc | 128.46 $ | 1000 | TRANS RF LDMOS 1250W 50VR... |
MRFE6VP61K25HR6 | NXP USA Inc | -- | 1000 | FET RF 2CH 133V 230MHZ NI... |
MRFE6VP61K25HR5 | NXP USA Inc | 110.1 $ | 1000 | FET RF 2CH 133V 230MHZ NI... |
MRFE6VP8600HR5 | NXP USA Inc | -- | 1000 | FET RF 2CH 130V 860MHZ NI... |
MRFE6VP100HR5 | NXP USA Inc | 51.32 $ | 1000 | FET RF 2CH 133V 512MHZ NI... |
MRFE6S9125NBR1 | NXP USA Inc | 45.32 $ | 1000 | FET RF 66V 880MHZ TO-272-... |
MRFE6S9125NR1 | NXP USA Inc | -- | 5500 | FET RF 66V 880MHZ TO-270-... |
MRFE6VP100HSR5 | NXP USA Inc | 51.93 $ | 1000 | FET RF 2CH 133V 512MHZ NI... |
MRFE6VP6300GSR5 | NXP USA Inc | 60.07 $ | 1000 | FET RF 50V 600MHZ NI780-4... |
MRFE6VP6300HR3 | NXP USA Inc | 61.01 $ | 1000 | FET RF 2CH 130V 230MHZ NI... |
MRFE6VP6300HSR5 | NXP USA Inc | 66.19 $ | 1000 | FET RF 2CH 130V 230MHZ NI... |
MRFE6VP6600GNR3 | NXP USA Inc | 66.47 $ | 1000 | TRANS RF LDMOS 600W 50VRF... |
MRFE6VP5600HR6 | NXP USA Inc | -- | 1000 | FET RF 2CH 130V 230MHZ NI... |
MRFE6VP5600HSR5 | NXP USA Inc | 80.16 $ | 1000 | FET RF 2CH 130V 230MHZ NI... |
MRFE8VP8600HR5 | NXP USA Inc | 93.98 $ | 1000 | TRANS RF N-CH 600W 50VRF ... |
MRFE6VP61K25GNR6 | NXP USA Inc | 95.35 $ | 1000 | TRANS RF LDMOS 1250W 50VR... |
MRFE6VP61K25HSR5 | NXP USA Inc | 110.72 $ | 1000 | FET RF 2CH 133V 230MHZ NI... |
MRFE6VP61K25GSR5 | NXP USA Inc | 110.72 $ | 1000 | FET RF 2CH 133V 230MHZ NI... |
MRFE8VP8600HSR5 | NXP USA Inc | 123.16 $ | 1000 | BROADBAND RF POWER LDMOS ... |
MRFE6VP8600HSR5 | NXP USA Inc | 175.94 $ | 1000 | FET RF 2CH 130V 860MHZ NI... |
MRFE6P3300HR3 | NXP USA Inc | 229.61 $ | 1000 | FET RF 66V 863MHZ NI-860C... |
MRFE6P3300HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 863MHZ NI-860C... |
MRFE6S9130HR3 | NXP USA Inc | -- | 1000 | FET RF 66V 880MHZ NI-780R... |
MRFE6S9130HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 880MHZ NI-780R... |
MRFE6S9130HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 880MHZ NI-780S... |
MRFE6S9130HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 880MHZ NI-780S... |
MRFE6S9135HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 940MHZ NI-880R... |
MRFE6S9135HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 940MHZ NI-880R... |
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