Allicdata Part #: | MRFE6S9160HR5-ND |
Manufacturer Part#: |
MRFE6S9160HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 66V 880MHZ NI-780 |
More Detail: | RF Mosfet LDMOS 28V 1.2A 880MHz 21dB 35W NI-780 |
DataSheet: | MRFE6S9160HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 21dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.2A |
Power - Output: | 35W |
Voltage - Rated: | 66V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRFE6S9160 |
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MRFE6S9160HR5 is a transistor in the RFFET (radio frequency field effect transistor) semiconductor family. It is a field-effect transistor (FET) constructed of a monolithic silicon die with source, gate and drain regions. As a FET, it is designed to perform as an amplifier or switch in frequency dependent or RF (radio frequency) circuits. The monolithic construction of the MRFE6S9160HR5 provides better performance, as it can offer higher performance levels than regular FETs with less susceptibility to interference or thermal effects. It is ideal for high frequency and high power applications with a wide range of frequency bands, including cellular and satellite services.
MRFE6S9160HR5 is a single-gate device, meaning that the gate terminal is only used for controlling the gate voltage. It has gold metalization (plated metal) bond pads and a small die size, making it suitable for high-speed applications. The MRFE6S9160HR5 also offers improved switching speed and gate bias range compared to conventional RF FETs. Typical gate bias is between +3 and -3 volts.
The working principle of the MRFE6S9160HR5 FET is based on the principle of capacitive-coupled fields. When a voltage is applied to the gate terminal, a potential difference is created between the gate and the source terminal which causes electrons to flow from the gate to the source. The increased charge at the gate causes a corresponding change in the surface potential of the channel. This surface potential modulation then controls the conductance of the channel and allows current to be transferred from the source to the drain.
MRFE6S9160HR5 FET is ideal for use in applications requiring high frequency, high power, and high accuracy. It is highly suitable for radio frequency communication and radar systems, as well as satellite and cellular services. It has also been used in RF amplifiers, matching networks, and frequency converters. It can even be used in automotive applications and consumer electronics, providing superior performance and reliability.
The MRFE6S9160HR5 is a highly reliable and versatile semiconductor device, making it one of the most popular choices for high performance applications. Thanks to its monolithic construction, it offers improved performance levels and higher frequency response than other FETs. As the output can be switched at high speed and with low gate bias, the MRFE6S9160HR5 is ideal for use in applications that require low-power and high-accuracy RF control.
The specific data is subject to PDF, and the above content is for reference
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