Allicdata Part #: | MRFE6S9201HR5-ND |
Manufacturer Part#: |
MRFE6S9201HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 66V 880MHZ NI-780 |
More Detail: | RF Mosfet LDMOS 28V 1.4A 880MHz 20.8dB 40W NI-780 |
DataSheet: | MRFE6S9201HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 20.8dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 40W |
Voltage - Rated: | 66V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRFE6S9201 |
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MRFE6S9201HR5 application field and working principle
MRFE6S9201HR5 is an advanced high power transistor. It is part of the MRF6S9201HR series products available from NXP Semiconductors and is generally used in radio frequency (RF) applications. It features good temperature stability and high power gain, making it suitable for a variety of different applications.
The MRFE6S9201HR5 is a N-channel MOSFET which belongs to the family of silicon RF field effect transistors (FETs). Its four terminals are designated as the drain, gate, source and body. The drain and source are used to provide the output power while the gate is used to control the current flow between the drain and source. The body terminal or substrate is connected to the ground.
The device works based on the principle of gate conduction. When a positive voltage is applied to the gate, the channel opens and allows the current to flow from the drain to the source. This mode of operation is referred to as "enhancement mode". When a negative voltage is applied to the gate, the channel shuts and the current flow is blocked. This mode of operation is referred to as "depletion mode".
MRFE6S9201HR5 features low gate charge and a high drain-source breakdown voltage. The high voltage capability of the device makes it suitable for use in switching power supplies and high voltage amplifiers. Its high current capability also makes it suitable for automotive applications, such as power door locks, engine control and E-mobility.
Specifically, the application field of MRFE6S9201HR5 can be divided into six categories: Consumer Electronics, Automotive, Industrial, Broadcast and Video Equipment, Portable Audio and Communications Systems. In Consumer Electronics, it is used in smart phones, HDTV and wireless communications systems. In Automotive, it is used in ECG and ABS systems, HID lighting, peak current reduction and ECU protection. In Industrial, it is used in motion control, AC/DC converters and welding. In Broadcast and Video Equipment, it is used in programmable logic controllers, power supplies and stereo power amplifiers. In Portable Audio, it is used in portable audio devices, audio amplifiers, and portable class D speaker systems. Finally, in Communications Systems, it is used in military radio systems, satellite communications and telecom power amplifiers.
In conclusion, MRFE6S9201HR5 is a high power transistor designed for use in a variety of RF applications. It offers high voltage, current and power handling capabilities, making it suitable for a vast range of applications. Its application field can be broadly divided into six categories, namely Consumer Electronics, Automotive, Industrial, Broadcast and Video Equipment, Portable Audio and Communications Systems.
The specific data is subject to PDF, and the above content is for reference
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