Allicdata Part #: | N25Q008A11EF440E-ND |
Manufacturer Part#: |
N25Q008A11EF440E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8M SPI 108MHZ UFDFPN |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8) SPI 108MHz |
DataSheet: | N25Q008A11EF440E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 8ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Base Part Number: | N25Q008A11 |
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The N25Q008A11EF440E is an 8Gb memory device used in a broad range of applications. It provides a high-performance, low-power solution for non-volatile storage of data. The chip features a wide operating temperature range, making it suitable for a variety of industrial and automotive applications. It supports both SPI and I2C protocols, making it easy to integrate with existing designs. It also features a high speed write feature, enabling fast data transfer and storage. The N25Q008A11EF440E also features an innovative cell organization that enhances its overall performance.
The N25Q008A11EF440E is suitable for a variety of applications, including automotive, medical, industrial, and consumer applications. The device can be used in automotive applications to provide reliable non-volatile storage of mission-critical data. It is also suitable for use in medical applications, such as implantable medical devices and medical instrumentation. Industrial applications include control systems and data logging. And, in consumer applications, the N25Q008A11EF440E is an ideal storage solution for cameras, cell phones, and other consumer electronics.
The N25Q008A11EF440E features an advanced NAND Flash memory structure, which is a highly reliable non-volatile memory technology. The NAND Flash memory structure is superior to NOR Flash memory in terms of density and cost-effectiveness. The memory device is organized in 8 blocks of 8 Gb each. Each block consists of 64 pages of 256B. Each page contains 16 256B words, each stored in a separate cell. The device also features a built-in software error-checking and correction (ECC) code that can detect and correct up to two bits per 256 bytes of data. This improves the device’s reliability.
The N25Q008A11EF440E also features an advanced write-protection feature. This feature is enabled by a special register, which can be programmed to prevent unintentional erasure or rewrite of stored data. This feature prevents accidental data loss and makes the device more robust. The device also features a sleep mode and power down command, which reduces power consumption. This feature is especially useful in applications where power is limited, such as portable electronics.
The N25Q008A11EF440E also features an advanced error correction code (ECC) for increased functional safety. This feature helps to detect and correct errors in stored data. The device also features write acceleration and quad instruction, which enable faster write speeds and storage. Additionally, the device supports both SPI and I2C protocols, making it easy to integrate with existing designs.
The N25Q008A11EF440E is an innovative memory chip and a valuable addition to the range of non-volatile storage solutions. It provides reliable data storage and a wide temperature range, making it suitable for industrial and automotive applications. The device also features advanced write-protection and built-in ECC, making it more robust and reliable. Additionally, it supports both SPI and I2C protocols, making it easy to integrate with existing designs. Moreover, its fast write speeds, power down command, and sleep modes make it a great choice for high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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